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Article: A simplified post-soft-breakdown current model for MOS devices

TitleA simplified post-soft-breakdown current model for MOS devices
Authors
Li, ZLXu, JPLai, PT
Issue Date2009
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2009, v. 95 n. 3, p. 689-692 How to Cite?
DOI: http://dx.doi.org/10.1007/s00339-008-4969-1
AbstractBased on the tunneling current model, a simplified current model is developed for MOS devices after soft breakdown (SBD). The post-soft-breakdown current consists of modified direct tunneling current and Fowler Nordheim (FN) tunneling current. Considering the change of gate oxide after soft breakdown, impacts of soft breakdown on the dielectric constant, and effective electron mass of the gate oxide are discussed, and their values are obtained by fitting simulation results to experimental data. It is found that the effective electron mass is decreased after soft breakdown due to damaged oxide, while the dielectric constant is increased after soft breakdown due to interface distortion. In this way, the leakage current after soft breakdown can be accurately calculated. The validity of the proposed model is confirmed by experimental results. © 2008 Springer-Verlag.
Persistent Identifierhttp://hdl.handle.net/10722/58799
ISSN
0947-8396
2021 Impact Factor: 2.983
2020 SCImago Journal Rankings: 0.485
ISI Accession Number ID
WOS:000264809500011
Funding AgencyGrant Number
National Natural Science Foundation of China60776016
Funding Information:

This work is financially supported by the National Natural Science Foundation of China (Grant No. 60776016). The authors would like to thank Dong Xu and Giuseppe Y. Mak for their useful discussion and advice.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, ZLen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-05-31T03:37:07Z-
dc.date.available2010-05-31T03:37:07Z-
dc.date.issued2009en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2009, v. 95 n. 3, p. 689-692en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58799-
dc.description.abstractBased on the tunneling current model, a simplified current model is developed for MOS devices after soft breakdown (SBD). The post-soft-breakdown current consists of modified direct tunneling current and Fowler Nordheim (FN) tunneling current. Considering the change of gate oxide after soft breakdown, impacts of soft breakdown on the dielectric constant, and effective electron mass of the gate oxide are discussed, and their values are obtained by fitting simulation results to experimental data. It is found that the effective electron mass is decreased after soft breakdown due to damaged oxide, while the dielectric constant is increased after soft breakdown due to interface distortion. In this way, the leakage current after soft breakdown can be accurately calculated. The validity of the proposed model is confirmed by experimental results. © 2008 Springer-Verlag.en_HK
dc.languageengen_HK
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.titleA simplified post-soft-breakdown current model for MOS devicesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0947-8396&volume=95&spage=689&epage=692&date=2009&atitle=A+Simplified+Post-Soft-Breakdown+Current+Model+for+MOS+Devicesen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s00339-008-4969-1en_HK
dc.identifier.scopuseid_2-s2.0-63949088010en_HK
dc.identifier.hkuros164256en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-63949088010&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume95en_HK
dc.identifier.issue3en_HK
dc.identifier.spage689en_HK
dc.identifier.epage692en_HK
dc.identifier.isiWOS:000264809500011-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridLi, ZL=34167922900en_HK
dc.identifier.scopusauthoridXu, JP=8965990100en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.citeulike3725764-
dc.identifier.issnl0947-8396-

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