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Article: A new high-temperature thermal sensor based on large-grain polysilicon on insulator

TitleA new high-temperature thermal sensor based on large-grain polysilicon on insulator
Authors
Wu, ZHLai, PTSin, JKO
KeywordsCrystallization
High-temperature thermal sensor
Large-grain polysilicon on insulator
Metal-induced lateral
Single-chip
Issue Date2006
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
Citation
Sensors And Actuators, A: Physical, 2006, v. 130-131 SPEC. ISS., p. 129-134 How to Cite?
DOI: http://dx.doi.org/10.1016/j.sna.2005.12.006
AbstractA new high-temperature thermal sensor based on large-grain polysilicon film formed by metal-induced lateral crystallization (MILC) is proposed. The sensor demonstrates a positive temperature coefficient (PTC) characteristic from 130 °C to high temperatures above 600 °C. Its fabrication process is more cost-effective than its silicon on insulator (SOI) counterpart, and its performance is better than the sensor based on small-grain polysilicon formed by solid-phase crystallization (SPC). Therefore, the proposed sensor is more suitable to be integrated into single-chip CMOS-MEMS gas-sensor system for monitoring the high temperature of sensing membranes. © 2005 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/73746
ISSN
0924-4247
2021 Impact Factor: 4.291
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000239295000019
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWu, ZHen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorSin, JKOen_HK
dc.date.accessioned2010-09-06T06:54:22Z-
dc.date.available2010-09-06T06:54:22Z-
dc.date.issued2006en_HK
dc.identifier.citationSensors And Actuators, A: Physical, 2006, v. 130-131 SPEC. ISS., p. 129-134en_HK
dc.identifier.issn0924-4247en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73746-
dc.description.abstractA new high-temperature thermal sensor based on large-grain polysilicon film formed by metal-induced lateral crystallization (MILC) is proposed. The sensor demonstrates a positive temperature coefficient (PTC) characteristic from 130 °C to high temperatures above 600 °C. Its fabrication process is more cost-effective than its silicon on insulator (SOI) counterpart, and its performance is better than the sensor based on small-grain polysilicon formed by solid-phase crystallization (SPC). Therefore, the proposed sensor is more suitable to be integrated into single-chip CMOS-MEMS gas-sensor system for monitoring the high temperature of sensing membranes. © 2005 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/snaen_HK
dc.relation.ispartofSensors and Actuators, A: Physicalen_HK
dc.subjectCrystallizationen_HK
dc.subjectHigh-temperature thermal sensoren_HK
dc.subjectLarge-grain polysilicon on insulatoren_HK
dc.subjectMetal-induced lateralen_HK
dc.subjectSingle-chipen_HK
dc.titleA new high-temperature thermal sensor based on large-grain polysilicon on insulatoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0924-4247&volume=130&spage=129&epage=134&date=2006&atitle=A+New+High-Temperature+Thermal+Sensor+Based+on+Large-Grain+Polysilicon+on+Insulatoren_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.sna.2005.12.006en_HK
dc.identifier.scopuseid_2-s2.0-33745851832en_HK
dc.identifier.hkuros120754en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33745851832&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume130-131en_HK
dc.identifier.issueSPEC. ISS.en_HK
dc.identifier.spage129en_HK
dc.identifier.epage134en_HK
dc.identifier.isiWOS:000239295000019-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridWu, ZH=15049005700en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridSin, JKO=7103312667en_HK
dc.identifier.issnl0924-4247-

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