File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Doping dependence of the spin resonance peak in bilayer high- Tc superconductors

TitleDoping dependence of the spin resonance peak in bilayer high- Tc superconductors
Authors
Issue Date2007
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2007, v. 75 n. 2, article no. 024516 How to Cite?
AbstractMotivated by a recent experiment on the bilayer Y1-x Cax Ba2 Cu3 Oy superconductor and based on a bilayer t-J model, we calculate the spin susceptibility at different doping densities in the even and odd channels in a bilayer system. It is found that the intensity of the resonance peak in the even channel is much weaker than that in the odd one, with the resonance position being at a higher frequency. While this difference decreases as the doping increases, both the position and amplitude of the resonance peaks in the two channels are very similar in the deeply overdoped sample. Moreover, the resonance frequency in the odd channel is found to be linear with the critical temperature Tc, while the resonance frequency increases as doping decreases in the even channel and tends to saturate at the underdoped sample. We elaborate the results based on the Fermi surface topology and the d -wave superconductivity. © 2007 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/80451
ISSN
2014 Impact Factor: 3.736
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZhou, Ten_HK
dc.contributor.authorWang, ZDen_HK
dc.contributor.authorLi, JXen_HK
dc.date.accessioned2010-09-06T08:06:36Z-
dc.date.available2010-09-06T08:06:36Z-
dc.date.issued2007en_HK
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2007, v. 75 n. 2, article no. 024516-
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80451-
dc.description.abstractMotivated by a recent experiment on the bilayer Y1-x Cax Ba2 Cu3 Oy superconductor and based on a bilayer t-J model, we calculate the spin susceptibility at different doping densities in the even and odd channels in a bilayer system. It is found that the intensity of the resonance peak in the even channel is much weaker than that in the odd one, with the resonance position being at a higher frequency. While this difference decreases as the doping increases, both the position and amplitude of the resonance peaks in the two channels are very similar in the deeply overdoped sample. Moreover, the resonance frequency in the odd channel is found to be linear with the critical temperature Tc, while the resonance frequency increases as doping decreases in the even channel and tends to saturate at the underdoped sample. We elaborate the results based on the Fermi surface topology and the d -wave superconductivity. © 2007 The American Physical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)-
dc.titleDoping dependence of the spin resonance peak in bilayer high- Tc superconductorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=75&spage=024516: 1&epage=6&date=2007&atitle=Doping+dependence+of+the+spin+resonance+peak+in+bilayer+high-Tc+superconductorsen_HK
dc.identifier.emailWang, ZD: zwang@hkucc.hku.hken_HK
dc.identifier.authorityWang, ZD=rp00802en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevB.75.024516en_HK
dc.identifier.scopuseid_2-s2.0-33846631932en_HK
dc.identifier.hkuros131542en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33846631932&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume75en_HK
dc.identifier.issue2en_HK
dc.identifier.spagearticle no. 024516-
dc.identifier.epagearticle no. 024516-
dc.identifier.isiWOS:000243895100099-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhou, T=36621605200en_HK
dc.identifier.scopusauthoridWang, ZD=14828459100en_HK
dc.identifier.scopusauthoridLi, JX=8678926100en_HK
dc.identifier.issnl1098-0121-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats