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Article: Nitrogen Adatom Diffusion on a Ga-Rich GaN (0001) Surface

TitleNitrogen Adatom Diffusion on a Ga-Rich GaN (0001) Surface
Authors
Dai, XQWu, HSXie, MHXu, SHTong, SY
Issue Date2004
PublisherZhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL
Citation
Chinese Physics Letters, 2004, v. 21 n. 3, p. 527-529 How to Cite?
DOI: http://dx.doi.org/10.1088/0256-307X/21/3/031
AbstractThe diffusion of N adatoms on a Ga-rich GaN(0001) surface has been studied using density-functional theory. The configuration of Ga adatoms on a Ga-rich GaN surface has been identified. The first adlayer Ga adatoms are on top of the terminating substrate Ga atoms, and the outmost adlayer Ga adatoms exist randomly at the T 4 or H 3 sites. A very different diffusivity of N adatoms on a Ga-rich GaN(0001) surface has been found. The excess Ga adatoms on a GaN(0001) surface reduce the diffusion barrier by 0.75eV and influence the migration path. It seems that bilayer Ga adatoms are helpful for N atom diffusion.
Persistent Identifierhttp://hdl.handle.net/10722/80474
ISSN
0256-307X
2021 Impact Factor: 2.293
2020 SCImago Journal Rankings: 0.348
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorDai, XQen_HK
dc.contributor.authorWu, HSen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorXu, SHen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2010-09-06T08:06:51Z-
dc.date.available2010-09-06T08:06:51Z-
dc.date.issued2004en_HK
dc.identifier.citationChinese Physics Letters, 2004, v. 21 n. 3, p. 527-529en_HK
dc.identifier.issn0256-307Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/80474-
dc.description.abstractThe diffusion of N adatoms on a Ga-rich GaN(0001) surface has been studied using density-functional theory. The configuration of Ga adatoms on a Ga-rich GaN surface has been identified. The first adlayer Ga adatoms are on top of the terminating substrate Ga atoms, and the outmost adlayer Ga adatoms exist randomly at the T 4 or H 3 sites. A very different diffusivity of N adatoms on a Ga-rich GaN(0001) surface has been found. The excess Ga adatoms on a GaN(0001) surface reduce the diffusion barrier by 0.75eV and influence the migration path. It seems that bilayer Ga adatoms are helpful for N atom diffusion.en_HK
dc.languageengen_HK
dc.publisherZhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPLen_HK
dc.relation.ispartofChinese Physics Lettersen_HK
dc.titleNitrogen Adatom Diffusion on a Ga-Rich GaN (0001) Surfaceen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0256-307X&volume=21&spage=527&epage=529&date=2004&atitle=Nitrogen+adatom+diffusion+on+a+Ga-rich+GaN+(0001)+surfaceen_HK
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityWu, HS=rp00813en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0256-307X/21/3/031en_HK
dc.identifier.scopuseid_2-s2.0-1642391852en_HK
dc.identifier.hkuros92625en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-1642391852&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume21en_HK
dc.identifier.issue3en_HK
dc.identifier.spage527en_HK
dc.identifier.epage529en_HK
dc.publisher.placeChinaen_HK
dc.identifier.scopusauthoridDai, XQ=7201696526en_HK
dc.identifier.scopusauthoridWu, HS=7405584367en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridXu, SH=36832008600en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.issnl0256-307X-

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