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Article: A study of Al1-xInxN growth by reflection high-energy electron diffraction-incorporation of cation atoms during molecular-beam epitaxy

TitleA study of Al1-xInxN growth by reflection high-energy electron diffraction-incorporation of cation atoms during molecular-beam epitaxy
Authors
Shi, BMWang, ZYXie, MHWu, HS
KeywordsGrowth (materials)
High energy electron diffraction
Lattice constants
Molecular beam epitaxy
Positive ions
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 92 n. 10, article no. 101902 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2894191
AbstractMolecular-beam epitaxy of Al1-x Inx N alloys with different indium (In) contents, x, were studied by in situ reflection high-energy electron diffraction (RHEED). Growth rates of the alloys were measured by the RHEED intensity oscillations for different source flux conditions, while the lattice parameters were derived from the diffraction patterns. It was found that under the excess nitrogen growth regime, incorporation of aluminum was complete whereas incorporation of In atoms was incomplete even at temperatures below 400 °C. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80475
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000253989300033
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorShi, BMen_HK
dc.contributor.authorWang, ZYen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorWu, HSen_HK
dc.date.accessioned2010-09-06T08:06:52Z-
dc.date.available2010-09-06T08:06:52Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 10, article no. 101902-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80475-
dc.description.abstractMolecular-beam epitaxy of Al1-x Inx N alloys with different indium (In) contents, x, were studied by in situ reflection high-energy electron diffraction (RHEED). Growth rates of the alloys were measured by the RHEED intensity oscillations for different source flux conditions, while the lattice parameters were derived from the diffraction patterns. It was found that under the excess nitrogen growth regime, incorporation of aluminum was complete whereas incorporation of In atoms was incomplete even at temperatures below 400 °C. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2008, v. 92 n. 10, article no. 101902 and may be found at https://doi.org/10.1063/1.2894191-
dc.subjectGrowth (materials)-
dc.subjectHigh energy electron diffraction-
dc.subjectLattice constants-
dc.subjectMolecular beam epitaxy-
dc.subjectPositive ions-
dc.titleA study of Al1-xInxN growth by reflection high-energy electron diffraction-incorporation of cation atoms during molecular-beam epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=92&spage=101902: 1&epage=3&date=2008&atitle=A+study+of+Al1-xInxN+growth+by+reflection+high-energy+electron+diffraction--incorporation+of+cation+atoms+during+molecular-beam+epitaxyen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityWu, HS=rp00813en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2894191en_HK
dc.identifier.scopuseid_2-s2.0-40849134307en_HK
dc.identifier.hkuros141605en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-40849134307&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue10en_HK
dc.identifier.spagearticle no. 101902-
dc.identifier.epagearticle no. 101902-
dc.identifier.isiWOS:000253989300033-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridShi, BM=15019647700en_HK
dc.identifier.scopusauthoridWang, ZY=8438226800en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridWu, HS=7405584367en_HK
dc.identifier.issnl0003-6951-

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