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Article: Photon-induced conduction modulation in SiO 2 thin films embedded with Ge nanocrystals

TitlePhoton-induced conduction modulation in SiO 2 thin films embedded with Ge nanocrystals
Authors
Ding, LChen, TPYang, MWong, JILiu, YYu, SFZhu, FRTan, MCFung, STung, CHTrigg, AD
KeywordsGermanium compounds
Light modulation
Nanocrystals
Optical data storage
Silicon compounds
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 90 n. 10, article no. 103102 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2711198
AbstractThe authors report the photon-induced conduction modulation in Si O2 thin films embedded with germanium nanocrystals (nc-Ge). The conduction of the oxide could be switched to a higher- or lower-conductance state by a ultraviolet (UV) illumination. The conduction modulation is caused by charging and discharging in the nc-Ge due to the UV illumination. If the charging process is dominant, the oxide conductance is reduced; however, if the discharging process is dominant, the oxide conductance is increased. As the conduction can be modulated by UV illumination, it could have potential applications in silicon-based optical memory devices. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80507
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000244791700080
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorDing, Len_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorYu, SFen_HK
dc.contributor.authorZhu, FRen_HK
dc.contributor.authorTan, MCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorTung, CHen_HK
dc.contributor.authorTrigg, ADen_HK
dc.date.accessioned2010-09-06T08:07:13Z-
dc.date.available2010-09-06T08:07:13Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 90 n. 10, article no. 103102-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80507-
dc.description.abstractThe authors report the photon-induced conduction modulation in Si O2 thin films embedded with germanium nanocrystals (nc-Ge). The conduction of the oxide could be switched to a higher- or lower-conductance state by a ultraviolet (UV) illumination. The conduction modulation is caused by charging and discharging in the nc-Ge due to the UV illumination. If the charging process is dominant, the oxide conductance is reduced; however, if the discharging process is dominant, the oxide conductance is increased. As the conduction can be modulated by UV illumination, it could have potential applications in silicon-based optical memory devices. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2007, v. 90 n. 10, article no. 103102 and may be found at https://doi.org/10.1063/1.2711198-
dc.subjectGermanium compounds-
dc.subjectLight modulation-
dc.subjectNanocrystals-
dc.subjectOptical data storage-
dc.subjectSilicon compounds-
dc.titlePhoton-induced conduction modulation in SiO 2 thin films embedded with Ge nanocrystalsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=90&spage=103102: 1&epage=3&date=2007&atitle=Photon-induced+conduction+modulation+in+SiO2+thin+films+embedded+with+Ge+nanocrystalsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2711198en_HK
dc.identifier.scopuseid_2-s2.0-33947128782en_HK
dc.identifier.hkuros126868en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33947128782&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume90en_HK
dc.identifier.issue10en_HK
dc.identifier.spagearticle no. 103102-
dc.identifier.epagearticle no. 103102-
dc.identifier.isiWOS:000244791700080-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridYu, SF=8602540300en_HK
dc.identifier.scopusauthoridZhu, FR=7202254675en_HK
dc.identifier.scopusauthoridTan, MC=16041148100en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridTung, CH=7201776867en_HK
dc.identifier.scopusauthoridTrigg, AD=8835395900en_HK
dc.identifier.issnl0003-6951-

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