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Article: 418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga-N bond configuration?

Title418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga-N bond configuration?
Authors
Ning, JQXu, SJYu, DPShan, YYLee, ST
KeywordsCrystal growth
Gallium nitride
Molecular vibrations
Nitriding
Raman scattering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 91 n. 10, article no. 103117 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2780081
AbstractA Raman-active vibration mode at 418 cm-1 is observed in wurtzite gallium nitride (GaN) nanowires synthesized by different growth methods. In particular, Raman scattering measurements of a number of GaN nanowires systematically prepared by nitriding Β- Ga2 O3 nanowires at different temperatures show an interesting evolution of the mode, revealing that it is most likely the vibration mode of N-rich octahedral Ga- N6 bonds. This idea is further supported by the high-resolution transmission electron microscopic observation. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80609
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000249322900070
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorNing, JQen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorYu, DPen_HK
dc.contributor.authorShan, YYen_HK
dc.contributor.authorLee, STen_HK
dc.date.accessioned2010-09-06T08:08:20Z-
dc.date.available2010-09-06T08:08:20Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 91 n. 10, article no. 103117-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80609-
dc.description.abstractA Raman-active vibration mode at 418 cm-1 is observed in wurtzite gallium nitride (GaN) nanowires synthesized by different growth methods. In particular, Raman scattering measurements of a number of GaN nanowires systematically prepared by nitriding Β- Ga2 O3 nanowires at different temperatures show an interesting evolution of the mode, revealing that it is most likely the vibration mode of N-rich octahedral Ga- N6 bonds. This idea is further supported by the high-resolution transmission electron microscopic observation. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2007, v. 91 n. 10, article no. 103117 and may be found at https://doi.org/10.1063/1.2780081-
dc.subjectCrystal growth-
dc.subjectGallium nitride-
dc.subjectMolecular vibrations-
dc.subjectNitriding-
dc.subjectRaman scattering-
dc.title418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga-N bond configuration?en_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=91&spage=103117: 1&epage=3&date=2007&atitle=418+cm-1+Raman+scattering+from+gallium+nitride+nanowires:+Is+it+a+vibration+mode+of+N-rich+Ga-N+bond+configuration?en_HK
dc.identifier.emailNing, JQ: ningjq@hkucc.hku.hken_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityNing, JQ=rp00769en_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2780081en_HK
dc.identifier.scopuseid_2-s2.0-34548506478en_HK
dc.identifier.hkuros135983en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34548506478&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume91en_HK
dc.identifier.issue10en_HK
dc.identifier.spagearticle no. 103117-
dc.identifier.epagearticle no. 103117-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000249322900070-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridNing, JQ=15845992800en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridYu, DP=7404667022en_HK
dc.identifier.scopusauthoridShan, YY=8988589600en_HK
dc.identifier.scopusauthoridLee, ST=7601407495en_HK
dc.identifier.issnl0003-6951-

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