File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Synthesis and characteristics of nanocrystalline Co/N thin film containing Co4N phase

TitleSynthesis and characteristics of nanocrystalline Co/N thin film containing Co4N phase
Authors
Jia, HWang, XZheng, WChen, YFeng, S
KeywordsCo4n
Magnetic Properties
Nanocrystalline
Sputtering
Issue Date2008
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseb
Citation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2008, v. 150 n. 2, p. 121-124 How to Cite?
DOI: http://dx.doi.org/10.1016/j.mseb.2008.03.001
AbstractNanocrystalline Co/N thin film containing Co4N phase has been deposited on Si (1 1 1) substrate by direct current magnetron sputtering in 10% N2/N2 + Ar discharge. The composition, structure and magnetic properties were examined by X-ray photoelectron spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM) and superconducting quantum interference device. XRD and TEM investigations showed that the grain size of nanocrystalline Co4N was in the range 10-25 nm (with the error of ±0.2 nm). Magnetic analysis indicated that the synthesized Co/N thin films had good in-plane anisotropy. The value of Hc with the domination orientation (1 1 1) was about 97 Oe. The saturation magnetization was estimated to be 103.9 ± 6.1 emu/g, which was larger than the value of 46.5 emu/g firstly reported by Oda et al. © 2008 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/92183
ISSN
0921-5107
2021 Impact Factor: 3.407
2020 SCImago Journal Rankings: 0.850
ISI Accession Number ID
WOS:000257366800008
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorJia, Hen_HK
dc.contributor.authorWang, Xen_HK
dc.contributor.authorZheng, Wen_HK
dc.contributor.authorChen, Yen_HK
dc.contributor.authorFeng, Sen_HK
dc.date.accessioned2010-09-17T10:38:31Z-
dc.date.available2010-09-17T10:38:31Z-
dc.date.issued2008en_HK
dc.identifier.citationMaterials Science and Engineering B: Solid-State Materials for Advanced Technology, 2008, v. 150 n. 2, p. 121-124en_HK
dc.identifier.issn0921-5107en_HK
dc.identifier.urihttp://hdl.handle.net/10722/92183-
dc.description.abstractNanocrystalline Co/N thin film containing Co4N phase has been deposited on Si (1 1 1) substrate by direct current magnetron sputtering in 10% N2/N2 + Ar discharge. The composition, structure and magnetic properties were examined by X-ray photoelectron spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM) and superconducting quantum interference device. XRD and TEM investigations showed that the grain size of nanocrystalline Co4N was in the range 10-25 nm (with the error of ±0.2 nm). Magnetic analysis indicated that the synthesized Co/N thin films had good in-plane anisotropy. The value of Hc with the domination orientation (1 1 1) was about 97 Oe. The saturation magnetization was estimated to be 103.9 ± 6.1 emu/g, which was larger than the value of 46.5 emu/g firstly reported by Oda et al. © 2008 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseben_HK
dc.relation.ispartofMaterials Science and Engineering B: Solid-State Materials for Advanced Technologyen_HK
dc.subjectCo4nen_HK
dc.subjectMagnetic Propertiesen_HK
dc.subjectNanocrystallineen_HK
dc.subjectSputteringen_HK
dc.titleSynthesis and characteristics of nanocrystalline Co/N thin film containing Co4N phaseen_HK
dc.typeArticleen_HK
dc.identifier.emailChen, Y:ychenc@hkucc.hku.hken_HK
dc.identifier.authorityChen, Y=rp1318en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.mseb.2008.03.001en_HK
dc.identifier.scopuseid_2-s2.0-44349100277en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-44349100277&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume150en_HK
dc.identifier.issue2en_HK
dc.identifier.spage121en_HK
dc.identifier.epage124en_HK
dc.identifier.isiWOS:000257366800008-
dc.identifier.issnl0921-5107-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats