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Article: Electromagnetic bandgap enhancement using the high-impedance property of offset finite-ground microstrip line

TitleElectromagnetic bandgap enhancement using the high-impedance property of offset finite-ground microstrip line
Authors
Sun, SZhu, L
KeywordsElectromagnetic bandgap
Guided-wave
Offset finite-ground microstrip line
Per-unit-length transmission parameter
Periodic structure
Issue Date2005
PublisherJohn Wiley & Sons, Inc. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/37176
Citation
Microwave And Optical Technology Letters, 2005, v. 47 n. 6, p. 543-546 How to Cite?
DOI: http://dx.doi.org/10.1002/mop.21225
AbstractThe high-impedance property of an offset finite-ground microstrip line is utilized to construct an improved transmission-line electromagnetic bandgap (EBG) structure with enhanced bandgap widt and attenuation. Using the self-calibrated method of moments (MoM), the two effective per-unit-length parameters are firstly extracted to demonstrate the fundamental frequency-dispersive characteristics of the guided wave in this EBG. Then, the transmission coefficients of the two finite-length EBG circuits with ideal impedance matching at two ports are characterized, thus exhibiting the distinctive bandstop and bandpas behaviors as the guided-wave propagates across this EBG with finite-extended region. Finally, a five-cell EBG circuit, fed with the standard 50Ω feed lines, is further modeled to give an evident verification of its enhanced EBG performance. © 2005 Wiley Periodicals, Inc.
Persistent Identifierhttp://hdl.handle.net/10722/92854
ISSN
0895-2477
2021 Impact Factor: 1.311
2020 SCImago Journal Rankings: 0.304
ISI Accession Number ID
WOS:000233228800012
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorSun, Sen_HK
dc.contributor.authorZhu, Len_HK
dc.date.accessioned2010-09-22T05:01:38Z-
dc.date.available2010-09-22T05:01:38Z-
dc.date.issued2005en_HK
dc.identifier.citationMicrowave And Optical Technology Letters, 2005, v. 47 n. 6, p. 543-546en_HK
dc.identifier.issn0895-2477en_HK
dc.identifier.urihttp://hdl.handle.net/10722/92854-
dc.description.abstractThe high-impedance property of an offset finite-ground microstrip line is utilized to construct an improved transmission-line electromagnetic bandgap (EBG) structure with enhanced bandgap widt and attenuation. Using the self-calibrated method of moments (MoM), the two effective per-unit-length parameters are firstly extracted to demonstrate the fundamental frequency-dispersive characteristics of the guided wave in this EBG. Then, the transmission coefficients of the two finite-length EBG circuits with ideal impedance matching at two ports are characterized, thus exhibiting the distinctive bandstop and bandpas behaviors as the guided-wave propagates across this EBG with finite-extended region. Finally, a five-cell EBG circuit, fed with the standard 50Ω feed lines, is further modeled to give an evident verification of its enhanced EBG performance. © 2005 Wiley Periodicals, Inc.en_HK
dc.languageengen_HK
dc.publisherJohn Wiley & Sons, Inc. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/37176en_HK
dc.relation.ispartofMicrowave and Optical Technology Lettersen_HK
dc.subjectElectromagnetic bandgapen_HK
dc.subjectGuided-waveen_HK
dc.subjectOffset finite-ground microstrip lineen_HK
dc.subjectPer-unit-length transmission parameteren_HK
dc.subjectPeriodic structureen_HK
dc.titleElectromagnetic bandgap enhancement using the high-impedance property of offset finite-ground microstrip lineen_HK
dc.typeArticleen_HK
dc.identifier.emailSun, S:sunsheng@hku.hken_HK
dc.identifier.authoritySun, S=rp01431en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/mop.21225en_HK
dc.identifier.scopuseid_2-s2.0-30544441402en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-30544441402&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume47en_HK
dc.identifier.issue6en_HK
dc.identifier.spage543en_HK
dc.identifier.epage546en_HK
dc.identifier.isiWOS:000233228800012-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridSun, S=7404509453en_HK
dc.identifier.scopusauthoridZhu, L=7404201926en_HK
dc.identifier.issnl0895-2477-

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