File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Modeling the effects of concentration-dependent carrier mobilities and self-heating on the resistance of thermal sensor built on thin silicon on insulator

TitleModeling the effects of concentration-dependent carrier mobilities and self-heating on the resistance of thermal sensor built on thin silicon on insulator
Authors
Wu, ZHLai, PT
Issue Date2004
Citation
International Conference On Solid-State And Integrated Circuits Technology Proceedings, Icsict, 2004, v. 2, p. 1212-1215 How to Cite?
AbstractBased on the minority-carrier exclusion theory, an analytical model is developed to explain the operating principle of thermal sensors fabricated on silicon-on-insulator in terms of the carrier-concentration distribution and the temperature dependence of the sensor resistance. The effects of temperature and carrier concentrations on carrier mobilities are included in the model. A two-region model is proposed to improve the resistance model at low bias current. The effect of self-heating on the sensor model is also considered. © 2004 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/99058
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWu, ZHen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-09-25T18:14:07Z-
dc.date.available2010-09-25T18:14:07Z-
dc.date.issued2004en_HK
dc.identifier.citationInternational Conference On Solid-State And Integrated Circuits Technology Proceedings, Icsict, 2004, v. 2, p. 1212-1215en_HK
dc.identifier.urihttp://hdl.handle.net/10722/99058-
dc.description.abstractBased on the minority-carrier exclusion theory, an analytical model is developed to explain the operating principle of thermal sensors fabricated on silicon-on-insulator in terms of the carrier-concentration distribution and the temperature dependence of the sensor resistance. The effects of temperature and carrier concentrations on carrier mobilities are included in the model. A two-region model is proposed to improve the resistance model at low bias current. The effect of self-heating on the sensor model is also considered. © 2004 IEEE.en_HK
dc.languageengen_HK
dc.relation.ispartofInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICTen_HK
dc.titleModeling the effects of concentration-dependent carrier mobilities and self-heating on the resistance of thermal sensor built on thin silicon on insulatoren_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-21644490168en_HK
dc.identifier.hkuros109586en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-21644490168&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume2en_HK
dc.identifier.spage1212en_HK
dc.identifier.epage1215en_HK
dc.identifier.scopusauthoridWu, ZH=7501411463en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats