HKU Scholars Hub: Browsing DSpace

Browsing by Author Xu, JP

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 中

or enter first few letters:

Showing results 21 to 32 of 32 < previous

	Title	Author(s)	Issue Date
	Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO Journal:Applied Physics A: Materials Science and Processing	Lai, PT Xu, JP Li, CX Chan, CL	2005
	Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer Journal:Microelectronics Reliability	Lu, HH Xu, JP Liu, L Wang, LS Lai, PT Tang, WM	2016
	Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Deng, LF Lai, PT Tao, QB Choi, HW Xu, JP Chen, WB Che, CM Liu, YR	2010
	Improved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3 Proceeding/Conference:ECS Transactions	Deng, LF Lai, PT Xu, JP Choi, HW Chen, WB Che, CM	2010
	Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation Journal:IEEE Transactions on Electron Devices	Huang, Y Xu, JP Liu, L Cheng, ZX Lai, PT Tang, WM	2017
	Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer Journal:IEEE Transactions on Device and Materials Reliability	Chen, JX Xu, JP Liu, L HUANG, XD Lai, PT Xu, HX	2014
	Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation Proceeding/Conference:IOP Conference Series: Materials Science and Engineering	Huang, Y Xu, JP Liu, L Cheng, ZX Lai, PT Tang, WM	2017
	N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric Journal:IEEE Transactions on Electron Devices	Huang, Y Xu, JP Liu, L Lai, PT Tang, WM	2016
	A simplified post-soft-breakdown current model for MOS devices Journal:Applied Physics A: Materials Science and Processing	Li, ZL Xu, JP Lai, PT	2009
	Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications Journal:IEEE Transactions on Electron Devices	LIU, L TANG, WM HUANG, X XU, JP Lai, PT	2019
	A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect Journal:Chinese Physics	Ji, F Xu, JP Lai, PT	2007
	Threshold voltage model of SiGe channel pMOSFET without Si cap layer Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC	Zou, X Li, CX Xu, JP Lai, PT Chen, WB	2006

Showing results 21 to 32 of 32 < previous