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Browsing by Author Xu, JP
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Showing results 26 to 32 of 32
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Title
Author(s)
Issue Date
Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer
Journal:
IEEE Transactions on Device and Materials Reliability
Chen, JX
Xu, JP
Liu, L
HUANG, XD
Lai, PT
Xu, HX
2014
Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation
Proceeding/Conference:
IOP Conference Series: Materials Science and Engineering
Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM
2017
N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric
Journal:
IEEE Transactions on Electron Devices
Huang, Y
Xu, JP
Liu, L
Lai, PT
Tang, WM
2016
A simplified post-soft-breakdown current model for MOS devices
Journal:
Applied Physics A: Materials Science and Processing
Li, ZL
Xu, JP
Lai, PT
2009
Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications
Journal:
IEEE Transactions on Electron Devices
LIU, L
TANG, WM
HUANG, X
XU, JP
Lai, PT
2019
A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect
Journal:
Chinese Physics
Ji, F
Xu, JP
Lai, PT
2007
Threshold voltage model of SiGe channel pMOSFET without Si cap layer
Proceeding/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Zou, X
Li, CX
Xu, JP
Lai, PT
Chen, WB
2006