Browsing by Author CHAN, CL

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TitleAuthor(s)Issue DateViews
 
2006
424
 
2009
215
 
2003
183
 
2000
165
 
Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO
Journal:Applied Physics A: Materials Science and Processing
2005
148
 
2000
183
Interface properties of N2O-annealed NH3-treated 6H-SiC MOS capacitor
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
1999
122
 
2001
160
Interface properties of N2O-annealed SiO2/SiC system
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
2000
116
 
2004
191
 
2005
186
 
2006
194
 
2021
3
 
2004
81
 
2001
164
 
1996
187
 
Optimization of N content for higk-k LaTiON gate dielectric of Ge MOS capacitor
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
2009
170
Optimization of silicon Spreading-Resistance Temperature sensor
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
2000
126
 
2016
114
 
1998
179