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Showing results 1 to 17 of 17

	Title	Author(s)	Issue Date	Views
	Atomic design of polarity of GaN films grown on SiC(0001) Journal:Communications in Theoretical Physics	Dai, XQ Wu, HS Xu, SH Xie, MH Tong, SY	2004	257
	Current transport property of n-GaN/n-6H-SiC heterojunction: Influence of interface states Journal:Applied Physics Letters	Huang, Y Chen, XD Fung, S Beling, CD Ling, CC Dai, XQ Xie, MH	2005	264
	Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion Journal:Physical Review B (Condensed Matter)	Xu, SH Wu, H Dai, XQ Lau, WP Zheng, LX Xie, MH Tong, SY	2003	121
	The effect of Cu on O adsorption on a ZnO(0001) surface: A first-principles study Journal:Journal of Physics Condensed Matter	Dai, XQ Yan, HJ Wang, JL Liu, YM Yang, Z Xie, MH	2008	163
	First-principle study of magnetism induced by vacancies in graphene Journal:European Physical Journal B	Dai, XQ Zhao, JH Xie, MH Tang, YN Li, YH Zhao, B	2011	218
	First-principles study of indium on silicon (1 0 0) - The structure, defects and interdiffusion Journal:Surface Science	Dai, XQ Ju, WW Wang, GT Xie, MH	2004	57
	In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy Journal:Physical Review B (Condensed Matter and Materials Physics)	Cao, YG Xu, SH Lü, W Dai, XQ Chan, YF Wang, N Liu, Y Wu, HS Xie, MH Tong, SY	2005	157
	A model for GaN 'ghost' islands Journal:Surface Science	Xie, MH Zheng, LX Dai, XQ Wu, HS Tong, SY	2004	139
	Molecular-beam Epitaxy of Monolayer MoSe2: Growth Characteristics and Domain Boundary Formation Journal:New Journal of Physics	JIAO, L Liu, H CHEN, J Yi, Y Chen, WG Cai, Y Wang, JN Dai, XQ Wang, N Ho, WK Xie, MH	2015	63
	Nitrogen Adatom Diffusion on a Ga-Rich GaN (0001) Surface Journal:Chinese Physics Letters	Dai, XQ Wu, HS Xie, MH Xu, SH Tong, SY	2004	177
	Quantum Effects and Phase Tuning in Epitaxial Hexagonal and Monoclinic MoTe2 Monolayers Journal:ACS Nano	CHEN, J Wang, GY Tang, YA TIAN, H Xu, J Dai, XQ Xu, H Jia, JF Ho, WK Xie, MH	2017	85
	Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates Journal:Applied Physics Letters	Xu, SJ Wang, HJ Cheung, SH Li, Q Dai, XQ Xie, MH Tong, SY	2003	253
	Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy Journal:Applied Physics Letters	Guo, X Xu, Z Liu, HC Zhao, B Dai, XQ He, HT Wang, JN Liu, H Ho, WK Xie, MH	2013	54
	Strain in epitaxial high-index Bi2Se3(221) films grown by molecular-beam epitaxy Journal:Applied Surface Science	Li, B Chen, WG Guo, X Ho, WK Dai, XQ Jia, JF Xie, MH	2017	74
	Structural properties of GaN films grown on the 6H-SiC(0001) (√3 × √3)R30° substrate Journal:Surface Review and Letters	Dai, XQ Wu, HS Xu, SH Xie, MH Tong, SY	2004	113
	Structural properties of oxygen on InN(0 0 0 1) surface Journal:Surface Science	Dai, XQ Wang, JL Yan, HJ Wu, XH Xie, MH	2007	59
	Ultrathin β-tellurium layers grown on highly oriented pyrolytic graphite by molecular-beam epitaxy Journal:Nanoscale	CHEN, J DAI, Y Ma, YQ Dai, XQ Ho, WK Xie, MH	2017	80

Showing results 1 to 17 of 17