Showing results 11 to 17 of 17
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Title | Author(s) | Issue Date | Views | |
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2017 | 147 | |||
Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates Journal:Applied Physics Letters | 2003 | 270 | ||
Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy Journal:Applied Physics Letters | 2013 | 61 | ||
Strain in epitaxial high-index Bi2Se3(221) films grown by molecular-beam epitaxy Journal:Applied Surface Science | 2017 | 109 | ||
Structural properties of GaN films grown on the 6H-SiC(0001) (√3 × √3)R30° substrate Journal:Surface Review and Letters | 2004 | 127 | ||
Structural properties of oxygen on InN(0 0 0 1) surface Journal:Surface Science | 2007 | 66 | ||
2017 | 111 |