Showing results 1 to 6 of 6
Title | Author(s) | Issue Date | Views | |
---|---|---|---|---|
Epitaxial growth mode and silicon/silicon-germanium heterointerfaces Journal:Journal of Materials Science: Materials in Electronics | 1996 | 46 | ||
Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy Journal:Journal of Crystal Growth | 1996 | 41 | ||
In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy Journal:Advanced Materials for Optics and Electronics | 1997 | 36 | ||
1994 | 55 | |||
1996 | 66 | |||
Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy Journal:Journal of Materials Science: Materials in Electronics | 1995 | 35 |