Browsing by Author HUANG, XD

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Showing results 15 to 34 of 35 < previous   next >
TitleAuthor(s)Issue DateViews
 
HfTiON as charge-trapping layer for nonvolatile memory applications
Proceeding/Conference:ECS Meeting
Huang, XDLai, PT
2012
46
 
High-Performance Amorphous InGaZnO Thin-Film Transistor with ZrLaO Gate Dielectric Fabricated at Room Temperature
Journal:Journal of Display Technology
Huang, XDMa, YSONG, JLai, PT
2016
45
 
Improved Charge-Trapping Performance of Hf-Doped SrTiO3 for Nonvolatile Memory Applications
Proceeding/Conference:ECS Transactions
Huang, XDLai, PT
2015
57
 
Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films
Journal:Applied Physics Letters
Huang, XDLiu, LXu, JPLai, PT
2011
158
 
Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory
Journal:Microelectronics Reliability
Chen, JXXu, JPLiu, LHuang, XDLai, PT
2014
44
 
Improved Performance of Scaled-Down α -InGaZnO Thin-Film Transistor by Ar Plasma Treatment
Journal:IEEE Electron Device Letters
Huang, XDSONG, JLai, PT
2016
35
 
Improved performance of yttrium-doped Al2O3 as inter-poly dielectric for flash-memory applications
Journal:IEEE Transactions on Device and Materials Reliability
Huang, XDLiu, LXu, JPLai, PT
2011
178
 
Improved Stability of α -InGaZnO Thin-Film Transistor under Positive Gate Bias Stress by Using Fluorine Plasma Treatment
Journal:IEEE Electron Device Letters
Huang, XDSONG, JLai, PT
2017
32
 
Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer
Journal:IEEE Transactions on Device and Materials Reliability
Chen, JXXu, JPLiu, LHUANG, XDLai, PTXu, HX
2014
27
 
LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications
Journal:Applied Physics A: Materials Science and Processing
Huang, XDLai, PTSin, JKO
2012
156
 
Lycium barbarum polysaccharide-glycoprotein preventative treatment ameliorates aversive
Journal:Neural Regeneration Research
Fu, YWPeng, YFHuang, XDYang, YHuang, LXi, YHu, ZFLin, SSo, KFRen, CR
2021
50
 
Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications
Journal:Microelectronics Reliability
SHI, RHuang, XDSin, JKOLai, PT
2016
45
 
Nb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:IEEE Transactions on Device and Materials Reliability
Shi, RPHuang, XDLeung, CHSin, JKOLai, PT
2015
29
 
Nitrided La2O3 as charge-trapping layer for nonvolatile memory applications
Journal:IEEE Transactions on Device and Materials Reliability
Huang, XDSin, JKOLai, PT
2012
130
 
Nitrided SrTiO 3 as charge-trapping layer for nonvolatile memory applications
Journal:Applied Physics Letters
Huang, XDLai, PTLiu, LXu, JP
2011
178
 
A novel MONOS memory with high-κ HfLaON as charge-storage layer
Journal:IEEE Transactions on Device and Materials Reliability
Liu, LXu, JPJi, FHuang, XDLai, PT
2011
155
 
Performance of nonvolatile memory by using band-engineered SrTiO 3/HfON stack as charge-trapping layer
Journal:Microelectronics Reliability
Huang, XDLai, PTSin, JKO
2012
101
 
Thermal and electrical characteristics of HfLaON with different nitridation annealings
Proceeding/Conference:ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Huang, XDLai, PT
2010
97
 
Using discrete event simulation to optimize nucleic acid testing process for coronavirus disease 2019 (COVID-19)
Journal:Journal of Thoracic Disease
Guan, WDZhou, JHHuang, XDWu, SGWu, QBWong, SSYang, ZF
14-Jun-2023
 
Y-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:IEEE Electron Device Letters
SHI, RHuang, XDSin, JKOLai, PT
2016
67
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