Skip navigation
HKU Login
Guest Login
Home
Publications
Researchers
Staff
Research Postgraduates
Organizations
Grants
Datasets
Deposit Data
HKUL Research Data Management
Theses
Patents
Community Service
Browsing by Author Hsu, CC
Jump to:
0-9
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
中
or enter first few letters:
Showing results 10 to 22 of 22
< previous
Title
Author(s)
Issue Date
Views
InGaP/GaAs power heterostructure-emitter bipolar transistor
Journal:
Electronics Letters
Yan, BP
Yang, ES
Yang, YF
Wang, XQ
Hsu, CC
2001
154
InGaP/GaAs0.94Sb<0.06>/GaAs double heterojunction bipolar transistor
Journal:
Electronics Letters
Yan, BP
Hsu, CC
Wang, XQ
Yang, ES
2002
155
InGaP/GaAsSb/GaAs DHBTs with low turn-on voltage and high current gain
Proceeding/Conference:
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Yan, BP
Hsu, CC
Wang, XQ
Bai, YK
Yang, ES
2002
178
Integration of GaInP/GaAs heterojunction bipolar transistors and high electron mobility transistors
Journal:
IEEE Electron Device Letters
Yang, YF
Hsu, CC
Yang, ES
1996
145
Low turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVD
Journal:
IEEE Electron Device Letters
Yan, BP
Hsu, CC
Wang, XQ
Yang, ES
2002
202
Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors
Journal:
IEEE Transactions on Electron Devices
Yang, ES
Hsu, CC
Lo, HB
Yang, YF
2000
163
Novel InGaP/GaAsSb/GaAs DHBTs
Cheung, CC
Yan, BP
Hsu, CC
Yang, ES
2003
101
Prevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors
Journal:
Semiconductor Science and Technology
Yang, YF
Hsu, CC
Yang, ES
1995
144
Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA
Journal:
Electronics Letters
Yang, YF
Hsu, CC
Yang, ES
1994
169
A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge
Journal:
Microelectronics Reliability
Van, BP
Yang, YF
Hsu, CC
Lo, HB
Yang, ES
2001
143
Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors
Journal:
IEEE Transactions on Electron Devices
Yang, YF
Hsu, CC
Yang, ES
1994
152
Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors
Journal:
IEEE Transactions on Electron Devices
Yang, ES
Yang, YF
Hsu, CC
Ou, HJ
Lo, HB
1999
153
Thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors
Journal:
Applied Physics Letters
Yan, BP
Hsu, CC
Wang, XQ
Yang, ES
2004
170