Showing results 19 to 22 of 22
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Title | Author(s) | Issue Date | Views | |
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A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge Journal:Microelectronics Reliability | 2001 | 155 | ||
Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices | 1994 | 161 | ||
Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices | 1999 | 165 | ||
Thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors Journal:Applied Physics Letters | 2004 | 180 |