Showing results 3 to 6 of 6
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Title | Author(s) | Issue Date | Views | |
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Effects of Ge concentration on SiGe oxidation behavior Journal:Applied Physics Letters | 1991 | 177 | ||
Electrical and structural properties of shallow p + junctions formed by dual (Ga/B) ion implantation Journal:Applied Physics Letters | 1990 | 176 | ||
Picosecond photoconductive response of polycrystalline silicon thin films Journal:Applied Physics Letters | 1990 | 186 | ||
Structural study of tin and carbon coimplanted silicon Journal:Journal of Applied Physics | 1991 | 177 |