Skip navigation
HKU Login
Guest Login
Home
Publications
Researchers
Staff
Research Postgraduates
Organizations
Grants
Datasets
Deposit Data
HKUL Research Data Management
Theses
Patents
Community Service
Browsing by Author Sin, JKO
Jump to:
0-9
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
中
or enter first few letters:
Showing results 5 to 24 of 30
< previous
next >
Title
Author(s)
Issue Date
Views
Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation
Journal:
Microelectronics Reliability
Or, DCT
Lai, PT
Sin, JKO
Kwok, PCK
Xu, JP
2003
173
A Fast Switching Insulated-Gate P-I-N Diode Controlled Thyristor Structure
Proceeding/Conference:
I E E E International Conference on Semiconductor Electronics Proceedings
Jun, C
Sin, JKO
Poon, MC
Ng, WT
Lai, PT
1996
49
Fluorinated SrTiO3 as charge-trapping layer for nonvolatile memory applications
Journal:
IEEE Transactions on Electron Devices
Huang, XD
Sin, JKO
Lai, PT
2011
160
Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:
IEEE Transactions on Nanotechnology
Huang, X
Sin, JKO
Lai, PT
2013
43
High-temperature thermal sensor based on ultra-thin silicon film for ultra-low-power applications
Journal:
Solid-State Electronics
Li, B
Wu, ZH
Lai, PT
Sin, JKO
Liu, BY
Zheng, XR
2003
172
Improved Charge-Trapping Characteristics of BaTiO3 by Zr Doping for Nonvolatile Memory Applications
Journal:
IEEE Electron Device Letters
Huang, X
Sin, JKO
Lai, PT
2013
24
Improved Charge-Trapping Characteristics of ZrO2 by Al Doping for Nonvolatile Memory Applications
Journal:
IEEE Transactions on Device and Materials Reliability
HUANG, X
SHI, R
Sin, JKO
Lai, PT
2016
35
Improved reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation
Journal:
Solid-State Electronics
Or, DCT
Lai, PT
Sin, JKO
Xu, JP
2003
143
Latch-up characteristics of a trench-gate conductivity modulated power transistor
Proceeding/Conference:
IEEE Region International Conference on Microelectronics and VLSI Proceedings
Jun, C
Sin, JKO
Ng, WT
Lai, PT
1995
99
LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications
Journal:
Applied Physics A: Materials Science and Processing
Huang, XD
Lai, PT
Sin, JKO
2012
156
Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications
Journal:
Microelectronics Reliability
SHI, R
Huang, XD
Sin, JKO
Lai, PT
2016
45
Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications
Journal:
Applied Physics Letters
SHI, R
HUANG, X
Sin, JKO
Lai, PT
2015
41
Nb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:
IEEE Transactions on Device and Materials Reliability
Shi, RP
Huang, XD
Leung, CH
Sin, JKO
Lai, PT
2015
29
A new high-temperature thermal sensor based on large-grain polysilicon on insulator
Journal:
Sensors and Actuators, A: Physical
Wu, ZH
Lai, PT
Sin, JKO
2006
190
A new lateral trench-gate conductivity modulated power transistor
Journal:
IEEE Transactions on Electron Devices
Cai, J
Sin, JKO
Mok, PKT
Ng, WT
Lai, PT
1999
148
Nitrided La2O3 as charge-trapping layer for nonvolatile memory applications
Journal:
IEEE Transactions on Device and Materials Reliability
Huang, XD
Sin, JKO
Lai, PT
2012
130
Novel silicon-embedded coreless transformer for on-chip isolated signal transfer
Journal:
IEEE Magnetics Letters
Wu, R
Sin, JKO
Hui, SY
2011
103
Optimization of plasma nitridation for reliability enhancement of low-temperature gate dielectric in MOS devices
Journal:
Solid-State Electronics
Or, DCT
Lai, PT
Sin, JKO
2003
148
Optimization of silicon Spreading-Resistance Temperature sensor
Proceeding/Conference:
Proceedings of the IEEE Hong Kong Electron Devices Meeting
Li, Bin
Lai, PT
Chan, CL
Sin, JKO
2000
113
Performance of nonvolatile memory by using band-engineered SrTiO 3/HfON stack as charge-trapping layer
Journal:
Microelectronics Reliability
Huang, XD
Lai, PT
Sin, JKO
2012
101