Showing results 6 to 11 of 11
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Title | Author(s) | Issue Date | Views | |
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Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system Journal:Applied Physics Letters | 2000 | 198 | ||
Formation of P In defect in annealed liquid-encapsulated Czochralski InP Journal:Applied Physics Letters | 1998 | 124 | ||
Native donors and compensation in Fe-doped liquid encapsulated Czochralski InP Journal:Journal of Applied Physics | 2001 | 178 | ||
Positron-annihilation study of compensation defects in InP Journal:Journal of Applied Physics | 2002 | 172 | ||
Positron-lifetime study of compensation defects in undoped semi-insulating InP Journal:Physical Review B (Condensed Matter) | 1998 | 180 | ||
Thermally induced conduction type conversion in n-type InP Journal:Journal of Applied Physics | 1999 |