Showing results 54 to 58 of 58
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Title | Author(s) | Issue Date | |
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A simplified post-soft-breakdown current model for MOS devices Journal:Applied Physics A: Materials Science and Processing | 2009 | ||
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings | 2005 | ||
Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications Journal:IEEE Transactions on Electron Devices | 2019 | ||
2007 | |||
Threshold voltage model of SiGe channel pMOSFET without Si cap layer Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC | 2006 |