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Title	Author(s)	Issue Date	Views
Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain Journal:IEEE Transactions on Electron Devices	Yang, YF Hsu, CC Yang, ES	1995	153
Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas Journal:Applied Physics Letters	Hsu, CC Yang, YF Ou, HJ Yang, ES Lo, HB	1997	172
CCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors Journal:Applied Physics Letters	Hsu, CC Yang, YF Ou, HJ Yang, ES	1996	119
Controlled release of dexamethasone from porous PLGA scaffolds under cyclic loading Journal:Science China Chemistry	Tang, GW Yang, YF Sun, AP Song, TT Zhao, YH Yuan, XB Yuan, XY Fan, YB Wang, M	2010	160
Copy number variation analysis based on AluScan sequences Journal:Journal of Clinical Bioinformatics	Yang, YF Ding, XF Chen, L Mat, WK Xu, MZ Chen, JF Wang, JM Xu, L Poon, WS Kwong, A Leung, GKK Tan, TC Yu, CH Ke, YB Xu, XY Ke, XY Ma, RC Chan, JC	2014	84
Evidence for the existence of a constitutive nitric oxide synthase in vascular smooth muscle Journal:Clinical and Experimental Pharmacology and Physiology	Cheah, LS Gwee, MCE Das, R Ballard, H Yang, YF Daniel, EE Kwan, CY	2002	149
Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector Journal:IEEE Transactions on Electron Devices	Yang, YF Hsu, CC Ou, HJ Huang, TC Yang, ES	1997	193
GRID: a student project to monitor the transient gamma-ray sky in the multi-messenger astronomy era Journal:Experimental Astronomy	Wen, JX Long, XY Zheng, XT An, Y Cai, ZY Cang, JR Che, YP Chen, CY Chen, LJ Chen, QJ Chen, ZY Sun, ZG Tan, XL Tang, SS Tao, MR Wang, BQ Wang, Y Wang, Z Wu, QY Wu, XY Xia, YH Fan, YZ Xiao, HY Xie, WJ Xu, DC Xu, R Xu, WL Yan, LB Yan, SY Yang, DX Yang, H Yang, HG Feng, CQ Yang, YS Yang, YF Yao, L Yu, H Yu, YY Zhang, AQ Zhang, BT Zhang, LX Zhang, MX Zhang, S Feng, H Zhang, TL Zhang, YC Zhao, QR Zhao, RN Zheng, SY Zhou, XL Zhu, RY Zou, Y An, P Cai, YF Gao, H Chen, HB Dai, ZG Huang, L Kang, MM Li, LX Li, Z Liang, EW Lin, L Cheng, YJ Lin, QQ Liu, CZ Liu, HB Liu, XW Liu, YN Lu, X Mao, SD Shen, RF Shu, J Su, M Deng, LT Sun, H Tam, PH Tang, CP Tian, Y Wang, FY Wang, JJ Wang, W Wang, ZH Wu, JF Wu, XF Deng, W Xiong, SL Xu, C Yu, JD Yu, WF Yu, YW Zeng, M Zeng, Z Zhang, BB Zhang, B Zhao, ZQ Ding, WQ Zhou, R Zhu, ZH Du, HC Duan, L Gan, Q Gao, T Gao, ZY Han, WB Han, YY He, XB He, XH Hou, L Hu, F Hu, JL Huang, B Huang, DY Huang, XF Jia, SH Jiang, YC Jin, YF Li, K Li, SY Li, YR Liang, JW Liang, YY Lin, W Liu, C Liu, G Liu, MY Liu, R Liu, TY Liu, WQ Lu, D Lu, PB Lu, ZY Luo, XY Ma, SZ Ma, YH Mao, XQ Mo, YS Nie, QY Qu, SY Shan, XL Shi, GY Song, WM	2019	51
High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management Journal:IEEE Transactions on Electron Devices	Yan, BP Yang, ES Yang, YF Wang, XQ Hsu, CC	2003	127
High frequency and low noise C-doped GalnP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP Journal:Electronics Letters	Yang, YF Hsu, CC Yang, ES	1996	90
High frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltage Journal:Electronics Letters	Ou, HJ Hsu, CC Yang, YF Yang, ES	1997	97
A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector Journal:IEEE Electron Device Letters	Yang, YF Hsu, CC Yang, ES Ou, HJ	1996	169
Improvement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing Journal:Applied Physics Letters	Tchikatilov, D Yang, YF Yang, ES	1996	189
InGaP/GaAs power heterostructure-emitter bipolar transistor Journal:Electronics Letters	Yan, BP Yang, ES Yang, YF Wang, XQ Hsu, CC	2001	154
Integration of GaInP/GaAs heterojunction bipolar transistors and high electron mobility transistors Journal:IEEE Electron Device Letters	Yang, YF Hsu, CC Yang, ES	1996	145
Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices	Yang, ES Hsu, CC Lo, HB Yang, YF	2000	163
Prevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors Journal:Semiconductor Science and Technology	Yang, YF Hsu, CC Yang, ES	1995	144
Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA Journal:Electronics Letters	Yang, YF Hsu, CC Yang, ES	1994	169
Reactive ion etching of gallium nitride using hydrogen bromide plasmas Journal:Electronics Letters	Ping, AT Adesida, I Asif Khan, M Kuznia, JN Yang, YF Yang, ES	1994	157
Recent advances in rock tunnelling in China (Keynote address) Proceeding/Conference:Proceedings of the Seminar on Geotechnical Problems of Rapidly Developing Areas in China, Hong Kong Institution of Engineers, May 24, 1996	Lee, CF Wang, SJ Yang, YF	1996	106

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