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TitleAuthor(s)Issue DateViews
 
Identification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepas
Proceeding/Conference:Materials Research Society Symposium Proceedings
1999
152
 
2006
530
 
2009
220
 
Improved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using wet-NO ge-surface pretreatment
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
2008
209
 
2019
184
 
1999
165
 
2020
14
Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
2007
197
 
2008
132
 
Optimization of Tree-like Core Overlay in Hybrid-structured Application-layer Multicast
Journal:KSII Transactions on Internet and Information Systems
2012
72
 
2020
21
 
2000
188
Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambients
Proceeding/Conference:Proceedings of the International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2006
2007
143
 
1998
84
 
Simulation and measurement of topological phase transitions with alkaline-earth-metal atoms in optical lattices
Journal:Physical Review A: covering atomic, molecular, and optical physics and quantum information
2019
25
 
Study of microvoids in high-rate a-Si:H using positron annihilation
Proceeding/Conference:Materials Research Society Symposium Proceedings
1997
153
 
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings
2005
189
 
2007
189
Threshold voltage model of SiGe channel pMOSFET without Si cap layer
Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
2006
121
 
2007
223