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Showing results 1 to 9 of 9

	Title	Author(s)	Issue Date	Views
	Effective Photon Recycling and Super Long Lived Minority Carriers in GaInP/GaAs Heterostructure Solar Cell: A Time-Resolved Optical Study Journal:IEEE Journal of Photovoltaics	Su, Z Xu, S Wang, X Ning, JQ Wang, RX Lu, SL Dong, JR Yang, H	2018	65
	Effects of forward bias and substrate misorientation on the electroluminescence properties of GaxIn1-xP/GaAs double-junction tandem solar cells Proceeding/Conference:E-MRS 2012 Spring Meeting	Deng, Z Wang, R Ning, J Zheng, C Bao, W Xu, S Zhang, XD Lu, SL Dong, JR Zhang, BS Yang, H	2012	38
	Electroluminescence probe of internal processes of carriers in GaInP single junction solar cell Journal:Solar Energy Materials and Solar Cells	SU, Z Xu, S Wang, RX Ning, J Dong, JR Lu, SL Yang, H	2017	54
	Improved carrier transport in intermixed GaAs/AlGaAs laser structure with multi-quantum wells cladding Proceeding/Conference:Materials Research Society Symposium - Proceedings	Teng, JH Chua, SJ Liu, W Wang, XC Choi, HW Dong, JR Li, G Braddoc, D	2000	115
	Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface Journal:Applied Physics Letters	Xu, SJ Li, Q Dong, JR Chua, SJ	2004	164
	Radiative recombination of carriers in the GaxIn1 -xP/GaAs double-junction tandem solarcells Journal:Solar Energy Materials & Solar Cells	Deng, Z Wang, RX Ning, J Zheng, C Bao, W Xu, S Zhang, XD Lu, SL Dong, JR Zhang, SB Yang, H	2013	64
	Super transverse diffusion of minority carriers in GaxIn1-xP/GaAs double-junction tandem solar cells Journal:Solar Energy	DENG, Z Wang, RX Ning, J Zheng, C Xu, S Xing, Z Lu, SL Dong, JR Zhang, BS Yang, H	2014	49
	Temperature-dependent photoluminescence of GaInP/AlGaInP multiple quantum well laser structure grown by metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine Journal:Journal of Applied Physics	Liu, CY Yuan, S Dong, JR Chua, SJ Chan, MCY Wang, SZ	2003	150
	Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition? Journal:Nanoscale	SU, Z Ning, J Deng, Z WANG, X Xu, S Wang, RX Lu, SL Dong, JR Yang, H	2016	44

Showing results 1 to 9 of 9