Browsing by Author Joyce, BA

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Showing results 1 to 20 of 20
TitleAuthor(s)Issue DateViews
 
Arsenic doping kinetics in silicon during gas source molecular beam epitaxy
Journal:Surface Science
Xie, MHZhang, JFernandez, JMLees, AKJoyce, BA
1998
51
 
Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grovvn by gas source molecular beam epitaxy
Journal:Materials Science and Technology
Fernandez, JMXie, MHMatsumura, AMokler, SMZhang, JJoyce, BA
1995
34
 
Arsenic surface segregation and incorporation in Si and Si1-xGex during gas source molecular beam epitaxy
Journal:Journal of Crystal Growth
Xie, MHLees, AKFernandez, JMZhang, JJoyce, BA
1997
54
 
Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy
Journal:Semiconductor Science and Technology
Matsumura, MFernandez, JMThornton, TJPrasad, RSHolmes, SNZhang, XMXie, MHZhang, JJoyce, BA
1995
68
 
Epitaxial growth mode and silicon/silicon-germanium heterointerfaces
Journal:Journal of Materials Science: Materials in Electronics
Fernández, JMHart, LZhang, XMXie, MHZhang, JJoyce, BA
1996
50
 
Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy
Journal:Journal of Crystal Growth
Zhang, JZhang, XMMatsumura, AMarinopoulou, AHartung, JAnwar, NParry, GXie, MHMokler, SMFernandez, JMJoyce, BA
1995
44
 
Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy
Journal:Journal of Crystal Growth
Joyce, BAFernández, JMXie, MHMatsumura, AZhang, JTaylor, AG
1996
 
Growth dynamics studied by RHEED during Si Ge epitaxy from gaseous hydrides
Journal:Surface Science
Xie, MHZhang, JMokler, SMFernández, JJoyce, BA
1994
32
 
Growth of Si1-xGex heterostructures using gas-source molecular beam epitaxy
Journal:International Journal of Optoelectronics
Ohtani, NMokler, SMXie, MHZhang, JZhang, XJoyce, BA
1994
 
Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4
Journal:Journal of Crystal Growth
Mokler, SMOhtani, NXie, MHZhang, XJoyce, BA
1993
 
In situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1-xGex alloys on Si(100) surfaces
Journal:Applied Physics Letters
Mokler, SMOhtani, NXie, MHZhang, JJoyce, BA
1992
 
In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy
Journal:Advanced Materials for Optics and Electronics
Joyce, BAZhang, JTaylor, AGXie, MHFernández, JMLees, AK
1997
 
Missing "sheets" in the reciprocal space representation of the disordered surface with one-dimensional domain boundaries
Journal:Surface Review and Letters
Tok, ESZhang, JKamiya, IXie, MHNeave, JHJoyce, BA
2001
47
 
New hydrogen desorption kinetics from vicinal Si(0 0 1) surfaces observed by reflectance anisotropy spectroscopy
Journal:Journal of Crystal Growth
Zhang, JLees, AKTaylor, AGXie, MHJoyce, BASobiesierksi, ZWestwood, DI
1997
 
Reflection high-energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy
Journal:Applied Physics Letters
Xie, MHZhang, JMokler, SMFernández, JMJoyce, BA
1994
61
 
RHEED investigation of Ge surface segregation during gas source MBE of Si Si1 - xGex heterostructures
Journal:Surface Science
Ohtani, NMokler, SMXie, MHZhang, JJoyce, BA
1993
 
Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: Hydrogen coverage and interfacial abruptness
Journal:Journal of Crystal Growth
Fernández, JMHart, LZhang, XMXie, MHZhang, JJoyce, BA
1996
72
 
Surface segregation during molecular beam epitaxy: The site-blocking effects of surfactant atoms
Journal:Surface Science
Xie, MHZhang, JLees, AFernandez, JMJoyce, BA
1996
 
Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys
Journal:Applied Physics Letters
Ohtani, NMokler, SMXie, MHZhang, JJoyce, BA
1993
60
 
Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy
Journal:Journal of Materials Science: Materials in Electronics
Fernández, JMMatsumura, AZhang, XMXie, MHHart, LZhang, JJoyce, BAThornton, TJ
1995
Showing results 1 to 20 of 20