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Browsing by Author XU, JP
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Showing results 1 to 20 of 32
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Title
Author(s)
Issue Date
A comparison of MISiC Schottky-diode hydrogen sensors made by NO, N 2O, or NH 3 nitridations
Journal:
IEEE Transactions on Electron Devices
Tang, WM
Lai, PT
Leung, CH
Xu, JP
2006
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Li, CX
Lai, PT
Xu, JP
Zou, X
2007
Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric
Journal:
Applied Physics Express
Wen, M
Xu, JP
Liu, L
Lai, PT
Tang, WM
2016
Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric
Journal:
IEEE Transactions on Device and Materials Reliability
Deng, LF
Liu, YR
Choi, HW
Xu, JP
Che, CM
Lai, PT
2012
Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric
Proceeding/Conference:
IEEE Electron Device Letters
Deng, LF
Lai, PT
Chen, WB
Xu, JP
Liu, YR
Choi, HW
Che, CM
2011
Effects of gate-insulator nitridation gas on MISiC Schottky-diode hydrogen sensors
Proceeding/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Tang, WM
Leung, CH
Lai, PT
Xu, JP
2006
Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer
Journal:
IEEE Transactions on Electron Devices
Lu, HH
Xu, JP
Liu, L
Lai, PT
Tang, WM
2017
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Proceeding/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Ji, F
Xu, JP
Li, CX
Lai, PT
Deng, LF
Zou, X
2010
Electricalperformance of multilayer MoS2 transistor with ALD HfTiO gate dielectric
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Wen, M
Xu, JP
Liu, L
Huang, Y
Lai, PT
Tang, WM
2016
Enhanced hydrogen-sensing characteristics of MISiC Schottky-diode hydrogen sensor by trichloroethylene oxidation
Journal:
Sensors and Actuators, A: Physical
Tang, WM
Lai, PT
Xu, JP
Chan, CL
2005
Fabrication and electrical performance of CVD-grown MoS2 transistor
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Wen, M
Xu, JP
Liu, L
Zhao, X
Lai, PT
Tang, WM
2017
High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric
Journal:
Applied Physics Letters
LIU, L
Choi, HW
Xu, JP
Lai, PT
2017
Impacts of Ti incorporation on the electrical properties and reliability of GaAs metal-oxide-semiconductor capacitors with high-k NdTiON as gate dielectric
Proceeding/Conference:
IEEE Semiconductor Interface Specialists Conference
Liu, LN
Choi, HW
Xu, JP
Lai, PT
2016
Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric
Journal:
IEEE Transactions on Electron Devices
Wen, M
Xu, JP
Liu, L
Lai, PT
Tang, WM
2017
Improved electrical properties of GaAs MOS capacitor by using HfLaON passivation layer
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Liu, LN
Choi, HW
Lai, PT
Xu, JP
2016
Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Zhao, X
Xu, JP
Liu, L
Lai, PT
Tang, WM
2019
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer
Journal:
Applied Physics Letters
Ji, F
Xu, JP
Liu, JG
Li, CX
Lai, PT
2011
Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer
Journal:
IEEE Transactions on Device and Materials Reliability
Lu, HH
Xu, JP
Liu, L
Lai, PT
Tang, WM
2017
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer
Journal:
IEEE Transactions on Electron Devices
Lu, HH
Liu, L
Xu, JP
Lai, PT
Tang, WM
2017
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Journal:
Applied Physics Letters
Cheng, ZX
Xu, JP
Liu, L
Huang, Y
Lai, PT
Tang, WM
2016
