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Title	Author(s)	Issue Date
A single-cell transcriptome of mesenchymal stromal cells to fabricate bioactive hydroxyapatite materials for bone regeneration Journal:Bioactive Materials	Guo, P Liu, X Zhang, P He, Z Li, Z Alini, M Richards, RG Grad, S Stoddart, MJ Zhou, G Zou, X Chan, D Tian, W Chen, D Gao, M Zhou, Z Liu, S	2022
Antecedents and consequences of young children's interest in mathematics Journal:Early Childhood Research Quarterly	OUYANG, X Zhang, X Zhang, Q ZOU, X	2021
Asymmetric Alkoxy and Alkyl Substitution on Nonfullerene Acceptors Enabling High‐Performance Organic Solar Cells Journal:Advanced Energy Materials	Chen, Y Bai, F Peng, Z Zhu, L Zhang, J Zou, X Qin, Y Kim, HK Yuan, J Ma, LK Zhang, J Yu, H Chow, PCY Huang, F Zou, Y Ade, H Liu, F Yan, H	2021
Damage-free mica/MoS2 interface for high-performance multilayer MoS2 field-effect transistors Journal:Nanotechnology	Zou, X Xu, J Liu, L Wang, H Lai, PT Tang, WM	2019
Depth profiling of vacancy-type defects in homogenous and multilayered a-Si films by positron beam Doppler broadening Journal:Journal of Non-Crystalline Solids	Zou, X Webb, DP Chan, YC Lam, YW Hu, YF Gong, M Beling, CD Fung, S	1998
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007	Li, CX Lai, PT Xu, JP Zou, X	2007
Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric Proceeding/Conference:IEEE International Conference of Nano/Micro Engineered and Molecular Systems (NEMS) Proceedings	Zou, X Xu, J Lai, PT Li, C	2008
Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric Journal:Microelectronics Reliability	Li, CX Zou, X Lai, PT Xu, JP Chan, CL	2008
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Zou, X Xu, JP Lai, PT Li, Y Ji, F Deng, LF	2010
Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectric Proceeding/Conference:Proceedings of RIUPEEEC	Zou, X Li, C Xu, JP Lai, PT Chen, WB	2006
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Ji, F Xu, JP Li, CX Lai, PT Deng, LF Zou, X	2010
Employee Output Response to Stock Market Wealth Shocks Journal:Journal of Financial Economics	Li, T Qian, W Xiong, W Zou, X	2021
Establishment of porcine and human expanded potential stem cells Journal:Nature Cell Biology	Gao, X Nowak-Imialek, M Chen, X Chen, D Herrmann, D Ruan, D Chen, ACH Eckersley-Maslin, MA Ahmad, S Lee, YL Kobayashi, T Ryan, D Zhong, J Zhu, J Wu, J Lan, G Petkov, S Yang, J Antunes, L Campos, LS Fu, B Wang, S Yong, Y Wang, X Xue, SG Ge, L Liu, Z Huang, Y Nie, T Li, P Wu, D Pei, D Zhang, Y Lu, L Yang, F Kimber, SJ Reik, W Zou, X Shang, Z Lai, L Surani, A Tam, PPL Ahmed, A Yeung, WSB Teichmann, SA Niemann, H Liu, P	2019
Factors That Prevent Spin-Triplet Recombination in Non-fullerene Organic Photovoltaics Journal:The Journal of Physical Chemistry Letters	Chow, PCY Chan, CCS Ma, C Zou, X Yan, H Wong, KS	2021
Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric Proceeding/Conference:Proceedings of 8th ICSICT	Zou, X Xu, JP Lai, PT Li, C Zhang, XF	2006
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings	Zou, X Xu, JP Lai, PT Li, CX Zhang, XF	2007
Identification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepas Proceeding/Conference:Materials Research Society Symposium Proceedings	Zou, X Chan, YC Webb, DP Lam, YW Lin, SH Chan, FYM Hu, YF Weng, X Beling, CD Fung, SHY	1999
Improved electrical properties of germanium MOS capacitors with gate dielectric grown in wet-NO ambient Journal:IEEE Electron Device Letters	Xu, JP Lai, PT Li, CX Zou, X Chan, CL	2006
Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment Journal:Applied Physics A: Materials Science and Processing	Xu, JP Zou, X Li, CX Lai, PT Chan, CL	2009
Improved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using wet-NO ge-surface pretreatment Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings	Li, CX Zou, X Xu, JP Lai, PT	2008

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