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Article: A novel MONOS memory with high-κ HfLaON as charge-storage layer
| Title | A novel MONOS memory with high-κ HfLaON as charge-storage layer | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Authors | |||||||||
| Keywords | Charge-Storage Layer (Csl) Endurance Hflaon Metaloxidenitrideoxidesilicon (Monos) Memory Program/Erase (P/E) Characteristics | ||||||||
| Issue Date | 2011 | ||||||||
| Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298 | ||||||||
| Citation | IEEE Transactions on Device and Materials Reliability, 2011, v. 11 n. 2, p. 244-247 How to Cite? | ||||||||
| Abstract | MIS capacitors with a high-κ HfLaON or HfLaO gate dielectric are fabricated by using a reactive sputtering method to investigate the applicability of the films as a novel charge-storage layer in a metaloxidenitrideoxidesilicon nonvolatile memory device. Experimental results indicate that the MIS capacitor with a HfLaON gate dielectric exhibits a large memory window, high program/erase speed, excellent endurance property, and reasonable retention. The involved mechanisms for these promising characteristics with HfLaON are thought to be in part from nitrogen incorporation leading to higher density of traps with deeper levels and, thus, higher trapping efficiency, stronger HfN and LaN bonds, and more stable atomic structure and HfLaONSiO 2 interface, as compared to the HfLaO dielectric. © 2011 IEEE. | ||||||||
| Persistent Identifier | http://hdl.handle.net/10722/155623 | ||||||||
| ISSN | 2021 Impact Factor: 1.886 2020 SCImago Journal Rankings: 0.384 | ||||||||
| ISI Accession Number ID |
Funding Information: This work was supported in part by the National Natural Science Foundation of China under Grant 60976091, by the Postdoctoral Science Foundation of China under Grant 20100470056, and by the University Development Fund (Nanotechnology Research Institute, 00600009) of the University of Hong Kong. | ||||||||
| References |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Liu, L | en_US |
| dc.contributor.author | Xu, JP | en_US |
| dc.contributor.author | Ji, F | en_US |
| dc.contributor.author | Huang, XD | en_US |
| dc.contributor.author | Lai, PT | en_US |
| dc.date.accessioned | 2012-08-08T08:34:25Z | - |
| dc.date.available | 2012-08-08T08:34:25Z | - |
| dc.date.issued | 2011 | en_US |
| dc.identifier.citation | IEEE Transactions on Device and Materials Reliability, 2011, v. 11 n. 2, p. 244-247 | en_US |
| dc.identifier.issn | 1530-4388 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10722/155623 | - |
| dc.description.abstract | MIS capacitors with a high-κ HfLaON or HfLaO gate dielectric are fabricated by using a reactive sputtering method to investigate the applicability of the films as a novel charge-storage layer in a metaloxidenitrideoxidesilicon nonvolatile memory device. Experimental results indicate that the MIS capacitor with a HfLaON gate dielectric exhibits a large memory window, high program/erase speed, excellent endurance property, and reasonable retention. The involved mechanisms for these promising characteristics with HfLaON are thought to be in part from nitrogen incorporation leading to higher density of traps with deeper levels and, thus, higher trapping efficiency, stronger HfN and LaN bonds, and more stable atomic structure and HfLaONSiO 2 interface, as compared to the HfLaO dielectric. © 2011 IEEE. | en_US |
| dc.language | eng | en_US |
| dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298 | - |
| dc.relation.ispartof | IEEE Transactions on Device and Materials Reliability | en_US |
| dc.subject | Charge-Storage Layer (Csl) | en_US |
| dc.subject | Endurance | en_US |
| dc.subject | Hflaon | en_US |
| dc.subject | Metaloxidenitrideoxidesilicon (Monos) Memory | en_US |
| dc.subject | Program/Erase (P/E) Characteristics | en_US |
| dc.title | A novel MONOS memory with high-κ HfLaON as charge-storage layer | en_US |
| dc.type | Article | en_US |
| dc.identifier.email | Lai, PT:laip@eee.hku.hk | en_US |
| dc.identifier.authority | Lai, PT=rp00130 | en_US |
| dc.description.nature | link_to_subscribed_fulltext | en_US |
| dc.identifier.doi | 10.1109/TDMR.2011.2117428 | en_US |
| dc.identifier.scopus | eid_2-s2.0-79959500531 | en_US |
| dc.identifier.hkuros | 225724 | - |
| dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-79959500531&selection=ref&src=s&origin=recordpage | en_US |
| dc.identifier.volume | 11 | en_US |
| dc.identifier.issue | 2 | en_US |
| dc.identifier.spage | 244 | en_US |
| dc.identifier.epage | 247 | en_US |
| dc.identifier.isi | WOS:000291819900005 | - |
| dc.publisher.place | United States | en_US |
| dc.identifier.scopusauthorid | Liu, L=35778603700 | en_US |
| dc.identifier.scopusauthorid | Xu, JP=35754128700 | en_US |
| dc.identifier.scopusauthorid | Ji, F=8238553900 | en_US |
| dc.identifier.scopusauthorid | Huang, XD=37057428400 | en_US |
| dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_US |
| dc.identifier.issnl | 1530-4388 | - |