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Article: Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate

TitleImpact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate
Authors
KeywordsGe MOS
germanate
interface quality
nitrogen incorporation
Issue Date2016
Citation
IEEE Transactions on Electron Devices, 2016, v. 63, p. 4888-4892 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/247431
ISSN
2019 Impact Factor: 2.913
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorCheng, ZX-
dc.contributor.authorLiu, L-
dc.contributor.authorXu, JP-
dc.contributor.authorHuang, Y-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2017-10-18T08:27:09Z-
dc.date.available2017-10-18T08:27:09Z-
dc.date.issued2016-
dc.identifier.citationIEEE Transactions on Electron Devices, 2016, v. 63, p. 4888-4892-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/247431-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectGe MOS-
dc.subjectgermanate-
dc.subjectinterface quality-
dc.subjectnitrogen incorporation-
dc.titleImpact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate -
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TED.2016.2618221-
dc.identifier.scopuseid_2-s2.0-84994300341-
dc.identifier.hkuros280845-
dc.identifier.volume63-
dc.identifier.spage4888-
dc.identifier.epage4892-
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000389342200042-
dc.identifier.issnl0018-9383-

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