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Article: Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate

TitleImpact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate
Authors
Cheng, ZXLiu, LXu, JPHuang, YLai, PTTang, WM
KeywordsGe MOS
germanate
interface quality
nitrogen incorporation
Issue Date2016
Citation
IEEE Transactions on Electron Devices, 2016, v. 63, p. 4888-4892 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2016.2618221
Persistent Identifierhttp://hdl.handle.net/10722/247431
ISSN
0018-9383
2021 Impact Factor: 3.221
2020 SCImago Journal Rankings: 0.828
ISI Accession Number ID
WOS:000389342200042

 

DC FieldValueLanguage
dc.contributor.authorCheng, ZX-
dc.contributor.authorLiu, L-
dc.contributor.authorXu, JP-
dc.contributor.authorHuang, Y-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2017-10-18T08:27:09Z-
dc.date.available2017-10-18T08:27:09Z-
dc.date.issued2016-
dc.identifier.citationIEEE Transactions on Electron Devices, 2016, v. 63, p. 4888-4892-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/247431-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectGe MOS-
dc.subjectgermanate-
dc.subjectinterface quality-
dc.subjectnitrogen incorporation-
dc.titleImpact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate -
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TED.2016.2618221-
dc.identifier.scopuseid_2-s2.0-84994300341-
dc.identifier.hkuros280845-
dc.identifier.volume63-
dc.identifier.spage4888-
dc.identifier.epage4892-
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000389342200042-
dc.identifier.issnl0018-9383-

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