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Article: Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

TitleImproved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation
Authors
Issue Date2016
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2016, v. 109 n. 19, article no. 193504 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/247432
ISSN
2019 Impact Factor: 3.597
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHuang, Y-
dc.contributor.authorXu, JP-
dc.contributor.authorLiu, L-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2017-10-18T08:27:10Z-
dc.date.available2017-10-18T08:27:10Z-
dc.date.issued2016-
dc.identifier.citationApplied Physics Letters, 2016, v. 109 n. 19, article no. 193504-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/247432-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 2016, v. 109 n. 19, article no. 193504 and may be found at https://doi.org/10.1063/1.4967186-
dc.titleImproved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4967186-
dc.identifier.scopuseid_2-s2.0-84994803343-
dc.identifier.hkuros280853-
dc.identifier.volume109-
dc.identifier.issue19-
dc.identifier.spagearticle no. 193504-
dc.identifier.epagearticle no. 193504-
dc.identifier.isiWOS:000387999600058-
dc.publisher.placeUnited States-
dc.identifier.issnl0003-6951-

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