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Article: Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer

TitleImproved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer
Authors
KeywordsGaAs
interface states
LaAlON
metal–oxide–semiconductor structures
passivation
thin films
Issue Date2017
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270
Citation
Physica Status Solidi - Rapid Research Letters, 2017, v. 11, p. 1700180 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/249634
ISSN
2019 Impact Factor: 2.291
2015 SCImago Journal Rankings: 1.243
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLIU, L-
dc.contributor.authorChoi, HW-
dc.contributor.authorXu, JP-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-11-21T03:04:55Z-
dc.date.available2017-11-21T03:04:55Z-
dc.date.issued2017-
dc.identifier.citationPhysica Status Solidi - Rapid Research Letters, 2017, v. 11, p. 1700180-
dc.identifier.issn1862-6254-
dc.identifier.urihttp://hdl.handle.net/10722/249634-
dc.languageeng-
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270-
dc.relation.ispartofPhysica Status Solidi - Rapid Research Letters-
dc.rightspostprint: This is the accepted version of the following article: FULL CITE, which has been published in final form at [Link to final article]. Preprint This is the pre-peer reviewed version of the following article: FULL CITE, which has been published in final form at [Link to final article].-
dc.subjectGaAs-
dc.subjectinterface states-
dc.subjectLaAlON-
dc.subjectmetal–oxide–semiconductor structures-
dc.subjectpassivation-
dc.subjectthin films-
dc.titleImproved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer-
dc.typeArticle-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1002/pssr.201700180-
dc.identifier.scopuseid_2-s2.0-85029046503-
dc.identifier.hkuros283026-
dc.identifier.volume11-
dc.identifier.spage1700180-
dc.identifier.epage1700180-
dc.identifier.isiWOS:000410132200006-
dc.publisher.placeGermany-
dc.identifier.issnl1862-6254-

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