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Article: Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices
Title | Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices |
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Authors | |
Keywords | Dielectric devices Dielectric materials Gallium arsenide Gate dielectrics High-k dielectric |
Issue Date | 2019 |
Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst |
Citation | Semiconductor Science and Technology, 2019, v. 34 n. 3, p. article no. 035027 How to Cite? |
Abstract | GaAs MOS capacitors with ZrLaON as the high-k dielectric layer and LaON as the interfacial passivation layer (IPL) are fabricated and the effects of the La content in ZrLaON on the device performance are investigated. Experimental results show that ZrLaON with a moderate or high La content induces serious moisture absorption, thus deteriorating the interfacial and electrical properties of the device, even with the LaON IPL. By adjusting the La content to a suitable value, e.g. a La/(La + Zr) atomic ratio of 13%, good interfacial and electrical properties can be obtained because the passivating role of La on the defects in ZrON can over-compensate the performance degradation induced by the moisture absorption. With the LaON IPL, further improvements in interfacial and electrical properties can be achieved because the LaON IPL can effectively passivate the As-O, Ga-O and As-As bonds at/near the high-k/GaAs interface. |
Persistent Identifier | http://hdl.handle.net/10722/278169 |
ISSN | 2023 Impact Factor: 1.9 2023 SCImago Journal Rankings: 0.411 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | LIU, L | - |
dc.contributor.author | LU, H | - |
dc.contributor.author | XU, J | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | TANG, WM | - |
dc.date.accessioned | 2019-10-04T08:08:48Z | - |
dc.date.available | 2019-10-04T08:08:48Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Semiconductor Science and Technology, 2019, v. 34 n. 3, p. article no. 035027 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | http://hdl.handle.net/10722/278169 | - |
dc.description.abstract | GaAs MOS capacitors with ZrLaON as the high-k dielectric layer and LaON as the interfacial passivation layer (IPL) are fabricated and the effects of the La content in ZrLaON on the device performance are investigated. Experimental results show that ZrLaON with a moderate or high La content induces serious moisture absorption, thus deteriorating the interfacial and electrical properties of the device, even with the LaON IPL. By adjusting the La content to a suitable value, e.g. a La/(La + Zr) atomic ratio of 13%, good interfacial and electrical properties can be obtained because the passivating role of La on the defects in ZrON can over-compensate the performance degradation induced by the moisture absorption. With the LaON IPL, further improvements in interfacial and electrical properties can be achieved because the LaON IPL can effectively passivate the As-O, Ga-O and As-As bonds at/near the high-k/GaAs interface. | - |
dc.language | eng | - |
dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst | - |
dc.relation.ispartof | Semiconductor Science and Technology | - |
dc.rights | Semiconductor Science and Technology. Copyright © Institute of Physics Publishing. | - |
dc.rights | This is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI]. | - |
dc.subject | Dielectric devices | - |
dc.subject | Dielectric materials | - |
dc.subject | Gallium arsenide | - |
dc.subject | Gate dielectrics | - |
dc.subject | High-k dielectric | - |
dc.title | Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices | - |
dc.type | Article | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1088/1361-6641/aafc65 | - |
dc.identifier.scopus | eid_2-s2.0-85064069969 | - |
dc.identifier.hkuros | 306910 | - |
dc.identifier.volume | 34 | - |
dc.identifier.issue | 3 | - |
dc.identifier.spage | article no. 035027 | - |
dc.identifier.epage | article no. 035027 | - |
dc.identifier.isi | WOS:000459557900002 | - |
dc.publisher.place | United Kingdom | - |
dc.identifier.issnl | 0268-1242 | - |