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TitleAuthor(s)Issue DateViews
Study of semi-insulating LEC InP in China
Proceeding/Conference:Conference Proceedings - International Conference on Indium Phosphide and Related Materials
2002
76
 
1997
41
 
The transformations of the EL6 deep level defect in n-GaAs: is EL6 a DX-like center?
Proceeding/Conference:Materials Research Society Symposium Proceedings
1998
128
 
1997
127
 
2003
190
 
1997
62
 
1998
188
1995
97
 
2010
105
 
1997
98
 
2004
176
PHOTOCONDUCTIVE RESPONSE FROM Co CENTRES IN InP.
Proceeding/Conference:Semi-Insulating III-V Materials
1982
19
 
2003
196
 
2003
170
 
2008
156
 
2003
192
 
Field effect on positron diffusion in semi-insulating GaAs
Journal:Physical Review B (Condensed Matter)
1996
139
 
2002
159
 
1999
134
2001
233
 
2007
162
 
Tungsten mesh as positron transmission moderator in a monoenergetic positron beam
Journal:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2004
216
 
2000
98
 
2008
78
 
Doppler-broadening measurements of microvoids at the Au/GaAs interface
Journal:Applied Physics A Materials Science & Processing
1995
190