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Article: Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix

TitleSpin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix
Authors
Yang, CCui, XShen, SQXu, ZGe, W
KeywordsPhysics
Issue Date2009
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2009, v. 80 n. 3, article no. 035313 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevB.80.035313
AbstractElectron-spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3-1 monolayer) embedded in (001) and (311)A GaAs matrix was studied by means of time-resolved Kerr rotation spectroscopy. The spin-relaxation time of the submonolayer InAs samples is significantly enhanced, compared with that of the monolayer InAs sample. The electron-spin-relaxation time and the effective g factor in submonolayer samples were found to be strongly dependent on the photogenerated carrier density. The contribution from both the D'yakonov-Perel' mechanism and Bir-Aronov-Pikus mechanism are discussed to interpret the temperature dependence of spin decoherence at various carrier densities. © 2009 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/59618
ISSN
1098-0121
2014 Impact Factor: 3.736
ISI Accession Number ID
WOS:000268617800085
Funding AgencyGrant Number
Hong Kong GRFHKU701308P
China NSF60706021
10874248
60876066
Funding Information:

The authors thank M. W. Wu for helpful discussions. This work was supported by Hong Kong GRF under Grant No. HKU701308P, China NSF under Grants No. 60706021, No. 10874248, and No. 60876066.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorYang, Cen_HK
dc.contributor.authorCui, Xen_HK
dc.contributor.authorShen, SQen_HK
dc.contributor.authorXu, Zen_HK
dc.contributor.authorGe, Wen_HK
dc.date.accessioned2010-05-31T03:53:54Z-
dc.date.available2010-05-31T03:53:54Z-
dc.date.issued2009en_HK
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2009, v. 80 n. 3, article no. 035313-
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59618-
dc.description.abstractElectron-spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3-1 monolayer) embedded in (001) and (311)A GaAs matrix was studied by means of time-resolved Kerr rotation spectroscopy. The spin-relaxation time of the submonolayer InAs samples is significantly enhanced, compared with that of the monolayer InAs sample. The electron-spin-relaxation time and the effective g factor in submonolayer samples were found to be strongly dependent on the photogenerated carrier density. The contribution from both the D'yakonov-Perel' mechanism and Bir-Aronov-Pikus mechanism are discussed to interpret the temperature dependence of spin decoherence at various carrier densities. © 2009 The American Physical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)-
dc.rightsCopyright 2009 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.80.035313-
dc.subjectPhysics-
dc.titleSpin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrixen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=80&issue=3 article no. 035313&spage=&epage=&date=2009&atitle=Spin+relaxation+in+submonolayer+and+monolayer+InAs+structures+grown+in+a+GaAs+matrixen_HK
dc.identifier.emailYang, C: yangchl@HKUCC.hku.hken_HK
dc.identifier.emailCui, X: xdcui@hku.hken_HK
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.authorityYang, C=rp00824en_HK
dc.identifier.authorityCui, X=rp00689en_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevB.80.035313en_HK
dc.identifier.scopuseid_2-s2.0-69549126464en_HK
dc.identifier.hkuros161430en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-69549126464&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume80en_HK
dc.identifier.issue3en_HK
dc.identifier.spagearticle no. 035313-
dc.identifier.epagearticle no. 035313-
dc.identifier.isiWOS:000268617800085-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYang, C=7407022337en_HK
dc.identifier.scopusauthoridCui, X=10839907500en_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK
dc.identifier.scopusauthoridXu, Z=7405429019en_HK
dc.identifier.scopusauthoridGe, W=7103160307en_HK
dc.identifier.issnl1098-0121-

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