Browsing by Author Zeng, SH

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TitleAuthor(s)Issue Date
 
Effects of annealing conditions on humidity-sensing characteristics of SrNbxTi1-xO3 thin-film resistor on SiO 2/Si substrate
Journal:Sensors and Actuators, A: Physical
Li, GQLai, PTLi, BHuang, MQZeng, SHLiu, YR
2003
 
Effects of ceramic-film thickness on humidity sensitivity of Al/Ba1-xLaxNbyTi1-yO3/SiO 2/Si structure
Journal:Smart Materials and Structures
Li, BLai, PTLi, GQZeng, SHHuang, MQ
2002
 
Effects of chemical composition on humidity sensitivity of Al/BaTiO3/Si structure
Journal:Applied Physics Letters
Li, GQLai, PTZeng, SHHuang, MQLiu, BY
1995
 
A humidity-sensing model for metal-insulator-semiconductor capacitors with porous ceramic film
Journal:Journal of Applied Physics
Li, GQLai, PTHuang, MQZeng, SHLi, BCheng, YC
2000
 
Influence of backsurface argon bombardment on SiO2-Si interface characteristics
Journal:Applied Physics Letters
Lai, PTHuang, MQZeng, XZeng, SHLi, GQ
1996
 
A new multi-function thin-film microsensor based on Ba1-xLaxTiO3
Journal:Smart Materials and Structures
Li, BLai, PTLi, GQZeng, SHHuang, MQ
2000
 
New thin-film humidity and thermal micro-sensor with Al/SrNbxTi1-xO3/SiO2/Si structure
Journal:Sensors and Actuators, A: Physical
Li, GQLai, PTZeng, SHHuang, MQLi, B
1999
 
Photo-, thermal and humidity sensitivity characteristics of sr1-xLaxTiO3 film on SiO2/Si substrate
Journal:Sensors and Actuators, A: Physical
Li, GQLai, PTZeng, SHHuang, MQCheng, YC
1997
 
Photoelectrical properties of Ba1-xLaxTiO3 thin-film resistor
Journal:Sensors and Actuators, A: Physical
Li, BLai, PTLi, GQZeng, SHHuang, MQ
2000
 
Sensing properties of Ba1-xLaxNbyTi1-yO3 (x=0.25%, y=0.25%) thin-film on SiO2/Si substrate
Journal:Materials Research Society Symposium - Proceedings
Li, BLai, PTLi, GQZeng, SHHuang, MQ
2001
 
A study of various oxide/silicon interfaces by Ar + backsurface bombardment
Journal:Journal of Applied Physics
Lai, PTLi, GQHuang, MQZeng, SHCheng, YC
1999
 
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
Journal:Microelectronics Reliability
Huang, MQLai, PTXu, JPZeng, SHLi, GQCheng, YC
1998
 
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
Huang, MQLai, PTXu, JPZeng, SHLi, GQCheng, YC
1997
Showing results 2 to 14 of 14 < previous