Showing results 2 to 3 of 3
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Title | Author(s) | Issue Date | Views | |
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Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature Journal:Advanced Electronic Materials | 29-Jan-2023 | |||
Realizing In-Memory Baseband Processing for Ultra-Fast and Energy-Efficient 6G Journal:IEEE Internet of Things Journal | 22-Aug-2023 |