Showing results 4 to 5 of 5
< previous
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO<inf>2</inf> Memristor Journal:Scientific Reports | 2016 | ||
Three-dimensional crossbar arrays of self-rectifying Si/SiO<inf>2</inf>/Si memristors Journal:Nature Communications | 2017 |