Showing results 1 to 2 of 2
Title | Author(s) | Issue Date | |
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Positron deep level transient spectroscopy - A new application of positron annihilation to semiconductor physics Journal:Applied Surface Science | 1997 | ||
Rapid thermal annealing induced deep level defects in Te-doped GaAs Journal:Physica Status Solidi (A) Applied Research | 1998 |