Showing results 11 to 14 of 14
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Title | Author(s) | Issue Date | Views | |
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Sensing properties of Ba1-xLaxNbyTi1-yO3 (x=0.25%, y=0.25%) thin-film on SiO2/Si substrate Journal:Materials Research Society Symposium - Proceedings | 2001 | 99 | ||
A study of various oxide/silicon interfaces by Ar + backsurface bombardment Journal:Journal of Applied Physics | 1999 | 174 | ||
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment Journal:Microelectronics Reliability | 1998 | 109 | ||
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting | 1997 | 89 |