Showing results 1 to 2 of 2
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV Journal:IEEE Electron Device Letters | 1-Jan-2025 | ||
Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC | 2024 |