Showing results 1 to 6 of 6
| Title | Author(s) | Issue Date | |
|---|---|---|---|
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics Journal:Nature Communications | 2023 | ||
Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN Journal:IEEE Transactions on Electron Devices | 2024 | ||
Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga<inf>2</inf>O<inf>3</inf> Heterojunction by Edge Termination Optimization Journal:IEEE Electron Device Letters | 2024 | ||
Ga<inf>2</inf>O<inf>3</inf>/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact Journal:Applied Physics Letters | 2024 | ||
Kilovolt, Low-Barrier Ga<inf>2</inf>O<inf>3</inf>JBS diode with Ultra-Low Forward Voltage Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2024 | ||
Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective Journal:Applied Physics Letters | 2024 |