Showing results 1 to 3 of 3
| Title | Author(s) | Issue Date | |
|---|---|---|---|
AlN metal-semiconductor field-effect transistors using Si-ion implantation Proceeding/Conference:Japanese Journal of Applied Physics | 2018 | ||
Materials and technology issues for the next generation of power electronic devices Proceeding/Conference:Device Research Conference - Conference Digest, DRC | 2020 | ||
P-Channel GaN transistor based on p-GaN/AlGaN/GaN on Si Journal:IEEE Electron Device Letters | 2019 |