Showing results 1 to 4 of 4
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grovvn by gas source molecular beam epitaxy Journal:Materials Science and Technology | 1995 | ||
Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy Journal:Journal of Crystal Growth | 1995 | ||
Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy Journal:Journal of Crystal Growth | 1996 | ||
Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy Journal:Journal of Materials Science: Materials in Electronics | 1995 |