Showing results 1 to 5 of 5
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings | 2022 | ||
Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage Journal:IEEE Transactions on Power Electronics | 2023 | ||
GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings | 2022 | ||
Stability, Reliability, and Robustness of GaN Power Devices: A Review Journal:IEEE Transactions on Power Electronics | 2023 | ||
True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching Journal:IEEE Electron Device Letters | 2021 |