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Showing results 1 to 13 of 13

	Title	Author(s)	Issue Date
	1 kV Self-Aligned Vertical GaN Superjunction Diode Journal:IEEE Electron Device Letters	Ma, Yunwei Porter, Matthew Qin, Yuan Spencer, Joseph Du, Zhonghao Xiao, Ming Wang, Yifan Kravchenko, Ivan Briggs, Dayrl P.Hensley, Dale K.Udrea, Florin Tadjer, Marko Wang, Han Zhang, Yuhao	2024
	Analytical calculation of the breakdown voltage for balanced, symmetrical superjunction power devices Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Napoli, Ettore Wang, Han Udrea, Florin	2010
	Breakdown voltage for superjunction power devices with charge imbalance: An analytical model valid for both punch through and non punch through devices Journal:IEEE Transactions on Electron Devices	Wang, Han Napoli, Ettore Udrea, Florin	2009
	Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching Journal:IEEE Electron Device Letters	Wang, Bixuan Zhang, Ruizhe Wang, Hengyu He, Quanbo Song, Qihao Li, Qiang Udrea, Florin Zhang, Yuhao	2023
	Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV Journal:IEEE Electron Device Letters	Guo, Yijin Qin, Yuan Xiao, Ming Porter, Matthew Song, Qihao Popa, Daniel Efthymiou, Loizos Cheng, Kai Kravchenko, Ivan Shao, Linbo Wang, Han Udrea, Florin Zhang, Yuhao	1-Jan-2025
	Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC	Wang, Bixuan Song, Qihao Mukherjee, Kalparupa Efthymiou, Loizos Popa, Daniel Longobardi, Giorgia Udrea, Florin Zhang, Yuhao	2024
	First Demonstration of Vertical Superjunction Diode in GaN Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Xiao, Ming Ma, Yunwei Du, Zhonghao Qin, Yuan Liu, Kai Cheng, Kai Udrea, Florin Xie, Andy Beam, Edward Wang, Boyan Spencer, Joseph Tadjer, Marko Anderson, Travis Wang, Han Zhang, Yuhao	2022
	Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Wang, Bixuan Zhang, Ruizhe Wang, Hengyu He, Quanbo Song, Qihao Li, Qiang Udrea, Florin Zhang, Yuhao	2023
	Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method Journal:IEEE Transactions on Power Electronics	Wang, Bixuan Zhang, Ruizhe Song, Qihao Wang, Hengyu He, Quanbo Li, Qiang Udrea, Florin Zhang, Yuhao	2024
	Multidimensional device architectures for efficient power electronics Journal:Nature Electronics	Zhang, Yuhao Udrea, Florin Wang, Han	2022
	Numerical Simulation and Analytical Modeling of Multichannel AlGaN/GaN Devices Journal:IEEE Transactions on Electron Devices	He, Quanbo Wang, Hengyu Xiao, Ming Zhang, Yuhao Sheng, Kuang Udrea, Florin	2024
	The effect of charge imbalance on superjunction power devices: An exact analytical solution Journal:IEEE Electron Device Letters	Napoli, Ettore Wang, Han Udrea, Florin	2008
	(Ultra-)Wide-Bandgap Heterogeneous Superjunction: Design, Performance Limit, and Experimental Demonstration Journal:IEEE Transactions on Electron Devices	Qin, Yuan Ma, Yunwei Xiao, Ming Porter, Matthew Udrea, Florin Wang, Han Zhang, Yuhao	2024

Showing results 1 to 13 of 13