Showing results 1 to 4 of 4
Title | Author(s) | Issue Date | |
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AlN metal-semiconductor field-effect transistors using Si-ion implantation Proceeding/Conference:Japanese Journal of Applied Physics | 2018 | ||
2013 | |||
Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam Proceeding/Conference:2014 International Workshop on Junction Technology, IWJT 2014 | 2014 | ||
Vacancy clusters introduced by CF<inf>4</inf>-based plasma treatment in GaN probed with a monoenergetic positron beam Journal:Applied Physics Express | 2014 |