Browsing by Author Wang, Hengyu

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Showing results 1 to 7 of 7
TitleAuthor(s)Issue Date
 
Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching
Journal:IEEE Electron Device Letters
Wang, BixuanZhang, RuizheWang, HengyuHe, QuanboSong, QihaoLi, QiangUdrea, FlorinZhang, Yuhao
2023
 
Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching
Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Wang, BixuanZhang, RuizheWang, HengyuHe, QuanboSong, QihaoLi, QiangUdrea, FlorinZhang, Yuhao
2023
 
Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method
Journal:IEEE Transactions on Power Electronics
Wang, BixuanZhang, RuizheSong, QihaoWang, HengyuHe, QuanboLi, QiangUdrea, FlorinZhang, Yuhao
2024
 
Junction-based deep mesa termination for multi-kilovolt vertical β-Ga2O3 power devices
Journal:Applied Physics Letters
Wan, JiangbinWang, HengyuZhang, ChiWang, CeCheng, HaoyuanYe, JiandongZhang, YuhaoSheng, Kuang
20-Jan-2025
 
Numerical Simulation and Analytical Modeling of Multichannel AlGaN/GaN Devices
Journal:IEEE Transactions on Electron Devices
He, QuanboWang, HengyuXiao, MingZhang, YuhaoSheng, KuangUdrea, Florin
2024
 
Switching Performance Analysis of Vertical GaN FinFETs: Impact of Interfin Designs
Journal:IEEE Journal of Emerging and Selected Topics in Power Electronics
Wang, HengyuXiao, MingSheng, KuangPalacios, TomasZhang, Yuhao
2021
 
Switching performance evaluation of 1200 v vertical GaN power FinFETs
Proceeding/Conference:2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2019
Wang, HengyuXiao, MingSheng, KuangPalacios, TomásZhang, Yuhao
2019
Showing results 1 to 7 of 7