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Showing results 1 to 13 of 13

	Title	Author(s)	Issue Date
	Application of noise to avoid overfitting in TCAD augmented machine learning Proceeding/Conference:International Conference on Simulation of Semiconductor Processes and Devices, SISPAD	Raju, Sophia Susan Wang, Boyan Mehta, Kashyap Xiao, Ming Zhang, Yuhao Wong, Hiu Yung	2020
	Design Space of Vertical Ga<inf>2</inf>O<inf>3</inf>Junctionless FinFET and its Enhancement with Gradual Channel Doping Proceeding/Conference:2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020	Elwailly, Adam Xiao, Ming Zhang, Yuhao Wong, Hiu Yung	2020
	High-voltage vertical Ga<inf>2</inf>O<inf>3</inf> power rectifiers operational at high temperatures up to 600 K Journal:Applied Physics Letters	Wang, Boyan Xiao, Ming Yan, Xiaodong Wong, Hiu Yung Ma, Jiahui Sasaki, Kohei Wang, Han Zhang, Yuhao	2019
	Implanted Guard Ring Edge Termination with Avalanche Capability for Vertical GaN Devices Journal:IEEE Transactions on Electron Devices	Wang, Yifan Porter, Matthew Xiao, Ming Lu, Albert Yee, Nathan Kravchenko, Ivan Srijanto, Bernadeta Cheng, Kai Wong, Hiu Yung Zhang, Yuhao	2024
	Improvement of TCAD Augmented Machine Learning Using Autoencoder for Semiconductor Variation Identification and Inverse Design Journal:IEEE Access	Mehta, Kashyap Raju, Sophia Susan Xiao, Ming Wang, Boyan Zhang, Yuhao Wong, Hiu Yung	2020
	Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes Journal:IEEE Transactions on Electron Devices	Zhang, Yuhao Sun, Min Wong, Hiu Yung Lin, Yuxuan Srivastava, Puneet Hatem, Christopher Azize, Mohamed Piedra, Daniel Yu, Lili Sumitomo, Takamichi De Almeida Braga, Nelson Mickevicius, Rimvydas Vidas Palacios, Tomás	2015
	Planar Implantation Edge Termination for Vertical GaN Power Devices Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023	Wang, Yifan Xiao, Ming Porter, Matthew Zhang, Ruizhe Song, Qihao Lu, Albert Yee, Nathan Wong, Hiu Yung Zhang, Yuhao	2023
	Rapid Inverse Design of GaN-on-GaN Diode with Guard Ring Termination for BV and (V<inf>F</inf>Q)<sup>-1</sup>Co-Optimization Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Yee, Nathan Lu, Albert Wang, Yifan Porter, Matthew Zhang, Yuhao Wong, Hiu Yung	2023
	Study of Vertical Ga<inf>2</inf>O<inf>3</inf> FinFET Short Circuit Ruggedness using Robust TCAD Simulation Journal:ECS Journal of Solid State Science and Technology	Lu, Albert Elwailly, Adam Zhang, Yuhao Wong, Hiu Yung	2022
	Surge current capability of ultra-wide-bandgap Ga<inf>2</inf>O<inf>3</inf> Schottky diodes Journal:Microelectronics Reliability	Buttay, Cyril Wong, Hiu Yung Wang, Boyan Xiao, Ming Dimarino, Christina Zhang, Yuhao	2020
	TCAD-Augmented Machine Learning with and without Domain Expertise Journal:IEEE Transactions on Electron Devices	Dhillon, Harsaroop Mehta, Kashyap Xiao, Ming Wang, Boyan Zhang, Yuhao Wong, Hiu Yung	2021
	TCAD-Machine learning framework for device variation and operating temperature analysis with experimental demonstration Journal:IEEE Journal of the Electron Devices Society	Wong, Hiu Yung Xiao, Ming Wang, Boyan Chiu, Yan Ka Yan, Xiaodong Ma, Jiahui Sasaki, Kohei Wang, Han Zhang, Yuhao	2020
	Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model Journal:Solid-State Electronics	Lu, Albert Marshall, Jordan Wang, Yifan Xiao, Ming Zhang, Yuhao Wong, Hiu Yung	2022

Showing results 1 to 13 of 13